Semiconductor Wiring Contact Structure Against Etching and Oxidation
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Solution Overview
Problem
Conventional contact structures for semiconductor devices face conduction failures due to etching issues during cleaning processes, leading to instability and reliability concerns in the connection between different conductive layers.
Innovation Solution
A wiring structure with a specific configuration involving a first conductive layer, a second oxide semiconductor layer, and a first insulating layer, where a gap is arranged between the conductive layer and the insulating layer, surrounded by the oxide semiconductor layer, ensuring stable contact between the conductive layers through a carefully designed opening in the insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a contact structure is formed with an opening in the insulating layer to connect conductive layers, then conduction between layers is enabled, but the exposed conductive layer may be etched during cleaning processes causing conduction failure
Solution Approach 1:
An oxide semiconductor layer is introduced as an intermediary between the first conductive layer and the first insulating layer. This intermediary layer protects the conductive layer from etching damage during cleaning processes while maintaining electrical conduction through the contact structure.
Solution Approach 2:
The oxide semiconductor layer is formed in advance before the cleaning process that may cause etching. This preliminary protective layer prevents direct exposure of the conductive layer to etching chemicals, thereby preventing conduction failure before it can occur.
2Reliability
If the conductive layer is exposed from the insulating layer to ensure contact, then conduction is established, but oxidation of the conductive layer may occur leading to contact resistance increase
Solution Approach 1:
The oxide semiconductor layer serves as a protective intermediary that prevents oxidation of the conductive layer while allowing electrical contact. It acts as a barrier against oxygen exposure during subsequent processing steps.
Solution Approach 2:
The oxide semiconductor layer creates an inert environment for the underlying conductive layer, protecting it from oxidation by preventing direct contact with oxygen-containing atmospheres during processing.
3Reliability
If a gap is arranged between the conductive layer and insulating layer surrounded by oxide semiconductor layer, then protection from etching and oxidation is achieved, but the structure complexity increases
Solution Approach 1:
The oxide semiconductor layer performs multiple functions simultaneously: it provides electrical conduction, protects against etching damage, prevents oxidation, and defines the gap structure. This multi-functionality reduces the need for additional separate protective layers or structures.
Solution Approach 2:
The conductive, protective, and gap-defining functions are merged into a single oxide semiconductor layer structure, rather than requiring separate layers for each function. This integration simplifies the overall wiring structure despite the added protection capabilities.
Data Source
AI summary
A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.