VLED Electrode Frame for Current Distribution

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Solution Overview

Problem

Current vertical light emitting diode (VLED) dies face efficiency limitations due to current crowding near the electrode, leading to increased power consumption and heat output, which prior solutions attempt to address by spreading the electrode but at the cost of reduced brightness.

Innovation Solution

A VLED die design featuring a metal base with a mirror, p-type and n-type semiconductor layers, an electrode frame with a four-sided picture frame outline on the n-type semiconductor layer to spread current efficiently, and a passivation layer to reduce light blocking and thermal issues, along with an organic or inorganic material within the electrode frame for optimized optical characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the electrode is formed with multiple legs to spread current, then current distribution is improved, but the area of the multiple quantum well layer is reduced limiting brightness

Engineering Contradiction:
Improvecurrent distributionVSAvoidbrightness
Core Design Contradiction:
ReliabilityVSIllumination intensity

Solution Approach 1:

The electrode is configured as a frame structure with multiple legs extending in different directions from a central region, transforming the current distribution approach from simple radial spreading to a multi-dimensional grid pattern that covers the n-type semiconductor layer more uniformly without occupying excessive active area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The electrode is divided into multiple discrete legs rather than a single continuous structure, allowing current to be distributed through multiple separate contact points that collectively cover the semiconductor layer without forming a large blocking area

Inventive Principle:
Principle #1Segmentation

2Device complexity

If current is concentrated near the electrode, then device complexity is reduced, but power consumption and heat output increase

Engineering Contradiction:
Improveelectrode structureVSAvoidpower consumption
Core Design Contradiction:
Device complexityVSUse of energy by stationary object

Solution Approach 1:

The electrode frame creates regions of different current density across the semiconductor layer, with higher current density near the electrode legs and lower density toward the center, optimizing local electrical characteristics to reduce overall power consumption and heat generation

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances thermal and electrical characteristics by reducing current crowding, minimizing light blocking, and maintaining brightness while lowering operational voltage and thermal density, resulting in improved performance and efficiency.

Implementation Method 1

The mirror reflects the emitted light outward

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

an organic or inorganic material contained within the electrode frame having selected optical characteristics

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS8283652B2Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
Publication Date: 2012.10.09 SEMILEDS OPTOELECTRONICS CO LTD
  • US8283652B2 patent drawing
  • US8283652B2 patent drawing
  • US8283652B2 patent drawing

AI summary

A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. The vertical light emitting diode (VLED) die also includes an electrode and an electrode frame on the n-type semiconductor layer, and an organic or inorganic material contained within the electrode frame. The electrode and the electrode frame are configured to provide a high current capacity and to spread current from the outer periphery to the center of the n-type semiconductor layer. The vertical light emitting diode (VLED) die can also include a passivation layer formed on the metal base surrounding and electrically insulating the electrode frame, the edges of the mirror, the edges of the p-type semiconductor layer, the edges of the multiple quantum well (MQW) layer and the edges of the n-type semiconductor layer.