Single-Crystal Oxide Insulation for Light Emitting Elements
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Solution Overview
Problem
Current light emitting elements face efficiency and reliability issues due to surface defects and impurity diffusion, which affect their performance in display devices.
Innovation Solution
A light emitting element with a core structure including semiconductor layers and an oxide insulating layer with a single crystalline structure, where the insulating layer surrounds the side surfaces and has a thickness of up to 10 nm, made from metal oxides like Ta, Hf, Zr, La, Si, Ti, and Al, to reduce surface defects and prevent impurity diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulating layer is used on the light emitting element core, then the manufacturing process is simpler, but surface defects and impurity diffusion occur reducing efficiency and reliability
Solution Approach 1:
The patent applies composite materials by using an oxide insulating layer with single crystalline structure composed of metal oxides (Ta, Hf, Zr, La, Si, Ti, Al) instead of conventional insulating materials. This composite structure provides both protection against impurity diffusion and reduction of surface defects while maintaining manufacturing feasibility through established oxide deposition techniques.
Solution Approach 2:
The patent changes the structural parameter of the insulating layer from amorphous or polycrystalline to single crystalline structure. This parameter change fundamentally improves the layer's ability to prevent impurity diffusion and reduce surface defects, directly addressing the reliability issue while the thin thickness (≤10 nm) keeps the overall device complexity manageable.
2Reliability
If the insulating layer thickness is increased to better protect against impurity diffusion, then reliability improves, but manufacturing precision and surface quality may deteriorate
Solution Approach 1:
The patent optimizes the thickness parameter of the oxide insulating layer to be 10 nm or less. This precise parameter control ensures that the layer is thin enough to maintain surface quality and manufacturing precision while being sufficiently thick to provide effective protection against impurity diffusion, resolving the contradiction between reliability and manufacturing precision.
Solution Approach 2:
The patent applies local quality by using a single crystalline structure specifically for the oxide insulating layer, which provides enhanced protection against impurity diffusion at the critical interface with the light emitting element core. The thin thickness (≤10 nm) maintains good surface quality, while the single crystalline structure provides the necessary barrier properties locally where it is most needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the efficiency and reliability of light emitting elements by reducing surface defects and preventing impurity diffusion, leading to improved performance in display devices.
Implementation Method 1
a first element insulating layer surrounding a side surface of the light emitting element core, wherein the first element insulating layer is an oxide insulating layer having a single crystalline structure
Implementation Method 2
A thickness of the first element insulating layer in a direction perpendicular to the side surface of the light emitting element core may be greater than about 0 nm and is about 10 nm or less
Data Source
AI summary
A display device includes a first electrode and a second electrode which are spaced apart from each other on a substrate. A light emitting element is disposed between the first electrode and the second electrode. A light emitting element core of the light emitting element includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer. A first element insulating layer surrounds a side surface of the light emitting element core. The first element insulating layer is an oxide insulating layer having a single crystalline structure.