Gate-Controlled Diode for Scalable Turn-On Voltage and Leakage Reduction
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Solution Overview
Problem
Existing diode configurations for circuit protection face challenges in managing high voltage surges and electrostatic discharge, leading to potential circuit damage due to inadequate turn-on voltage and increased leakage current, especially when multiple diodes are connected in series, which can result in higher resistance and overheating issues.
Innovation Solution
A semiconductor device with a controllable gate electrode that induces additional space charges to adjust the turn-on voltage and resistance, allowing the diode to operate efficiently in both normal and surge event modes by switching between fully depleted and partially depleted states, effectively shunting excess voltage to ground with low forward resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If multiple diodes are connected in series to increase turn-on voltage, then the turn-on voltage is improved, but the resistance increases and leakage current increases
Solution Approach 1:
The patent changes the electrical parameters of the diode by introducing a controllable depletion region that can dynamically adjust the turn-on voltage and resistance characteristics, allowing the diode to operate with optimized parameters under different voltage conditions rather than being fixed by series connections
Solution Approach 2:
The patent introduces a dynamic element (controllable depletion region) that can change its state based on applied voltage, transitioning between high-impedance and low-impedance states to adapt the diode's turn-on voltage and resistance characteristics in real-time, eliminating the need for static series connections
2Strength
If multiple diodes are connected in series to increase turn-on voltage, then the turn-on voltage is improved, but the device complexity increases
Solution Approach 1:
The patent merges the functions of multiple diodes into a single diode structure by incorporating a controllable depletion region that can provide equivalent voltage blocking capability, thereby simplifying the overall device configuration while maintaining the desired turn-on voltage characteristic
3Reliability
If a diode is used for circuit protection, then circuit protection is provided, but overheating occurs during surge events due to high resistance
Solution Approach 1:
The patent employs a dynamic resistance characteristic where the diode transitions from high resistance during normal operation to low resistance during surge events, allowing efficient current shunting and heat dissipation during protection events without excessive overheating
4Reliability
If a gate electrode is added to control the depletion region, then turn-on voltage becomes scalable and leakage current is reduced, but device complexity increases
Solution Approach 1:
The gate electrode serves multiple functions simultaneously: it controls the depletion region to adjust turn-on voltage, reduces leakage current, and enables dynamic resistance adjustment, thereby providing multiple benefits from a single added component rather than requiring separate solutions for each problem
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a diode configuration with a scalable turn-on voltage and reduced leakage current during normal operation, while efficiently shunting surge currents during events, thereby protecting circuits from damage and reducing the risk of overheating.
Implementation Method 1
the gate electrode is configured in the first mode to generate an electric field to exert a potential change in the third semiconductor region
Implementation Method 2
additional space charges are induced in the semiconductor region to deplete the semiconductor region
Data Source
AI summary
A semiconductor device and a corresponding circuit for shunting current in a circuit protection configuration is disclosed. An example device includes a first semiconductor region having an anode electrical contact, a second semiconductor region having a cathode electrical contact, a third semiconductor region extending between the first semiconductor region and the second semiconductor region, the second semiconductor region and the third semiconductor region forming a PN junction therebetween, and a gate coupled to the third semiconductor region. The gate is controllable between a first mode in which additional space charges are induced in the semiconductor region to deplete the semiconductor region, and a second mode in which additional space charges are not induced in the semiconductor region.