Titanium Nitride Electrode Deposition at Reduced Thermal Budget
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Solution Overview
Problem
The challenge in semiconductor device fabrication is to deposit titanium nitride films at reduced temperatures while maintaining their quality, as high temperature deposition can lead to thermal diffusion, unwanted material formation, and increased electrical resistivity.
Innovation Solution
A cyclical deposition method using titanium tetraiodide (TiI4) as the titanium precursor and a nitrogen precursor is employed, allowing for the formation of titanium nitride layers with low electrical resistivity and high crystalline quality at reduced temperatures, typically below 400°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature deposition is used for titanium nitride films, then film density and crystalline quality are improved, but thermal diffusion of metal species into adjacent dielectric materials occurs and unwanted materials form
Solution Approach 1:
The patent changes the deposition temperature parameter from high temperature to reduced temperature (below 400°C), and compensates by optimizing other parameters including using titanium tetraiodide precursor, controlling deposition pressure, and adjusting film thickness to achieve the desired crystalline quality without thermal diffusion
Solution Approach 2:
The patent employs a composite approach by combining titanium nitride with other materials such as tungsten or copper in multi-layer electrode structures, where the titanium nitride layer provides barrier and adhesion functions while the composite structure achieves the desired electrical and mechanical properties
2Object-affected harmful factors
If deposition temperature is reduced to avoid thermal diffusion, then thermal budget requirements are met, but film density and crystalline quality deteriorate
Solution Approach 1:
The patent optimizes multiple deposition parameters simultaneously including using titanium tetraiodide precursor, controlling deposition pressure, and adjusting film thickness to compensate for the reduced temperature and achieve desired crystalline quality
Solution Approach 2:
The patent introduces an intermediary layer or modifies the deposition environment to facilitate better film formation at reduced temperatures, ensuring adequate crystalline quality without requiring high thermal energy
3Temperature
If deposition temperature is reduced, then thermal budget constraints are satisfied, but electrical resistivity of the film increases
Solution Approach 1:
The patent optimizes deposition parameters including pressure, precursor selection (titanium tetraiodide), and film thickness to achieve low electrical resistivity at reduced deposition temperatures below 400°C
Solution Approach 2:
The patent uses composite electrode structures combining titanium nitride with highly conductive materials like tungsten or copper, where the titanium nitride provides barrier and adhesion functions while the composite achieves low overall electrical resistivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in titanium nitride films with electrical resistivity of less than 400 μΩ-cm, improved crystalline structure, and reduced impurity concentration, enabling conformal deposition on complex structures without thermal budget constraints.
Implementation Method 1
A cyclical deposition method using titanium tetraiodide (TiI4) as the titanium precursor and a nitrogen precursor is employed, allowing for the formation of titanium nitride layers with low electrical resistivity and high crystalline quality at reduced temperatures
Data Source
AI summary
A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.