Oxide Semiconductor Array Substrate ESD Discharge Layout
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Solution Overview
Problem
Oxide semiconductor materials used in thin film transistors are prone to static electricity accumulation during the manufacturing process, leading to electrostatic breakdown and reduced yield due to their amorphous structure and poor conductivity, which complicates the formation of active layers in array substrates.
Innovation Solution
A method of manufacturing array substrates involves forming conductive lines on a base, depositing an oxide semiconductor film in contact with these lines to discharge static electricity, and patterning the film using a photoetching process while ensuring insulation from the conductive lines to prevent electrostatic accumulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor film is deposited to cover conductive lines for static electricity discharge, then electrostatic protection is improved, but direct contact between oxide semiconductor film and conductive lines causes short circuit risk
Solution Approach 1:
The patent applies local quality by creating different functional regions in the oxide semiconductor film: areas in direct contact with conductive lines serve as static electricity discharge paths, while other areas are patterned to form insulated active layers of thin film transistors. This spatial differentiation of functions resolves the contradiction between electrostatic protection and short circuit prevention.
Solution Approach 2:
The oxide semiconductor film is segmented into multiple functional zones: contact regions with conductive lines for electrostatic discharge, and patterned regions forming transistor active layers separated by insulating layers. This segmentation allows simultaneous achievement of electrostatic protection and electrical insulation.
2Ease of manufacture
If oxide semiconductor film is patterned by photoetching to form active layers, then transistor fabrication is achieved, but static electricity accumulation during processing causes electrostatic breakdown
Solution Approach 1:
The patent implements preliminary action by pre-establishing conductive lines and creating direct contact regions with the oxide semiconductor film before the photoetching process. This preliminary electrostatic discharge path prevents static electricity accumulation during subsequent photoetching operations, enabling safe transistor fabrication.
Solution Approach 2:
The conductive lines act as intermediaries between the oxide semiconductor film and the substrate, providing a controlled path for static electricity discharge. This intermediary structure enables the photoetching process to proceed without electrostatic breakdown while maintaining the integrity of the transistor active layers.
3Reliability
If conductive lines are formed to discharge static electricity, then electrostatic protection is improved, but additional manufacturing steps increase process complexity
Solution Approach 1:
The patent merges the electrostatic protection function with the existing conductive line structure used for transistor fabrication. The same conductive lines that form part of the transistor circuitry also serve as static electricity discharge paths, eliminating the need for separate protection structures and reducing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces electrostatic breakdown and improves the yield of array substrates by discharging static electricity through conductive lines, ensuring reliable formation of active layers in oxide thin film transistors.
Implementation Method 1
the at least one conductive line being configured to discharge static electricity generated in the oxide semiconductor film
Implementation Method 2
patterning the oxide semiconductor film by using a photoetching process to remove a portion of the oxide semiconductor film
Data Source
AI summary
The present disclosure provides an array substrate and a preparation method thereof, belonging to the field of display technology. The preparation method of the array substrate includes: providing a base substrate; forming a common electrode bonding line on one side of the base substrate; forming an oxide semiconductor material layer, and the oxide semiconductor material layer and the common electrode bonding line are located on the base substrate on the same side, and the oxide semiconductor material layer is electrically connected to at least part of the common electrode bonding line; the oxide semiconductor material layer is patterned to form an oxide semiconductor layer with multiple active layers, and the oxide semiconductor layer is The orthographic projection on the base substrate and the common electrode bonding line overlap at most parts of the orthographic projection on the base substrate, and any active layer and the common electrode bonding line are insulated from each other. The preparation method of the array substrate can avoid electrostatic breakdown of the array substrate during the preparation process.