Two-Terminal ESD Clamp Structure to Prevent False Triggering
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Solution Overview
Problem
Current ESD protection solutions for IC devices, such as SCR and stand-alone grounded gate NMOS, are prone to gate oxide breakdown and false triggering during ESD events, leading to potential permanent damage.
Innovation Solution
A two-terminal IC device with a non-planar architecture is introduced, featuring a deep N-well stacked between a P-type substrate and multiple wells, with optimized doping concentrations and dimensions to modulate snapback characteristics, eliminating the need for additional circuitry and preventing false triggers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SCR or stand-alone grounded gate NMOS is used for ESD protection, then ESD protection function is provided, but gate oxide breakdown and false triggering occur during ESD events
Solution Approach 1:
The patent changes the doping concentration parameters of the semiconductor regions. Specifically, the first doped semiconductor material has a doping concentration of at least 1×10^19 atoms/cm³, while the second doped semiconductor material has a doping concentration of at least 1×10^20 atoms/cm³. These parameter changes prevent gate oxide breakdown and false triggering while maintaining ESD protection functionality.
Solution Approach 2:
The patent employs a composite semiconductor structure combining multiple doped regions with different doping types and concentrations. The structure includes a first doped semiconductor material (e.g., P-type) and a second doped semiconductor material (e.g., N-type) stacked in sequence, forming a composite material system that achieves both ESD protection and prevention of gate oxide breakdown.
2Reliability
If additional circuitry is added to improve ESD protection, then protection capability is enhanced, but device complexity increases
Solution Approach 1:
The patent extracts and eliminates the need for additional trigger circuitry and external components. The ESD protection function is achieved through the intrinsic properties of the two-terminal semiconductor device itself, removing the complexity of external SCR circuits or grounded gate NMOS configurations while maintaining effective ESD protection.
Solution Approach 2:
The two-terminal semiconductor device performs multiple functions: it provides ESD protection, acts as a clamp device, and prevents false triggering all within a single integrated structure. This multi-functionality eliminates the need for separate circuit components and reduces overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The two-terminal IC device effectively enhances ESD protection by preventing premature breakdown and false triggering, ensuring reliable operation during ESD events without additional circuitry, thus safeguarding victim devices.
Implementation Method 1
optimized doping concentrations and dimensions to modulate snapback characteristics
Data Source
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AI summary
A two-terminal IC device may be used for ESD protection. The IC device may include a deep N-well may be between a P-type substrate and a group of wells that includes a first P-well, a second P-well, and a N-well. There may be another well between the second P-well and the N-well. A P-type semiconductor structure may be formed in the P-well. Two N-type semiconductor structures may be formed in the second P-well and the N-well, respectively. A contact of the P-type semiconductor structure may be electrically coupled to a contact of the N-type semiconductor structure in the second P-well. The two contacts may constitute the first terminal of the IC device. The contact of the N-type semiconductor structure in the N-well may constitute the second terminal of the IC device. The first P-well may have a greater dimension but lower dopant concentration than the second P-well or the N-well.