Rectangular Light-Emitting Element Layout for Uniform Emission
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Solution Overview
Problem
Existing light-emitting elements with a rectangular shape in a top view often experience deteriorated light emission distribution, which affects their performance and reliability.
Innovation Solution
A light-emitting element with a semiconductor structure featuring a nitride semiconductor, including an n-layer, an active layer, and a p-layer, is designed with specific electrode configurations and insulating films to optimize light emission distribution. The structure includes n-external and p-external connection portions, and the use of insulating films with openings to reduce unevenness and enhance light emission uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a rectangular shape is used in a top view, then the device structure is simple, but the light emission distribution deteriorates
Solution Approach 1:
The patent applies local quality by creating different regions with distinct functions: a first region with exposed n-layer for n-type electrical connection and a second region with covered n-layer for light emission. This spatial differentiation of properties allows the device to achieve both structural simplicity and improved light emission distribution by optimizing each region's characteristics for its specific purpose.
2Reliability
If electrodes are directly connected to the semiconductor structure, then electrical connection is achieved, but cracks may generate during mounting
Solution Approach 1:
The patent introduces an insulating film as an intermediary element between the semiconductor structure and external environment. This insulating film, with its openings for electrode connection, acts as a mediator that protects the semiconductor structure from mechanical stress during mounting while still allowing necessary electrical connections, thereby preventing crack generation.
3Illumination intensity
If the active layer and p-layer are fully exposed, then electrical connection is maximized, but light emission uniformity decreases
Solution Approach 1:
The patent segments the semiconductor structure into distinct functional regions: a first region where the n-layer is exposed for electrical connection and a second region where the active layer and p-layer are covered for optimized light emission. This segmentation allows independent optimization of each region's characteristics, achieving both adequate electrical connection and improved light emission uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a light-emitting element with improved light emission distribution, reduced risk of crack generation during mounting, and increased reliability of the light-emitting device by minimizing load on critical regions and optimizing electrode connections.
Implementation Method 1
an insulating film that covers the semiconductor structure and includes a plurality of first openings each located in the corresponding one of the plurality of first regions and a plurality of second openings each located on the p-layer above the second region
Implementation Method 2
a semiconductor structure, which includes a long side extending in a first direction and a short side extending in a second direction orthogonal to the first direction and being shorter than the long side in a top view and includes an n-layer, a p-layer, and an active layer located between the n-layer and the p-layer
Data Source
AI summary
A light-emitting element includes a semiconductor structure, which has a long side extending in a first direction and a short side extending in a second direction orthogonal to the first direction and being shorter than the long side in a top view and includes an n-layer, a p-layer, and an active layer. The n-layer includes a plurality of first regions exposed from the active layer and the p-layer, and a second region above which the active layer and the p-layer are disposed. The light-emitting element further includes a plurality of n-external connection portions, each disposed above the second region and each electrically connected to the n-electrode, and a plurality of p-external connection portions, each disposed on the p-electrode and electrically connected to the p-electrode. In a top view, the first region is disposed between the plurality of n-external connection portions and the plurality of p-external connection portions.