Diamond Semiconductor Doping via Ion Tracks for High Electron Mobility
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Solution Overview
Problem
The development of practical diamond-based semiconductors is limited by the difficulty in fabricating high-quality n-type layers, as existing methods struggle to control vacancy defects and achieve sufficient conduction electron mobility.
Innovation Solution
A method involving the introduction of minimal acceptor dopant atoms to create ion tracks in a diamond lattice, followed by the introduction of substitutional dopant atoms through these tracks, with subsequent annealing to minimize vacancy creation and enhance conduction electron mobility, resulting in a diamond semiconductor with 0.16% of donor atoms contributing conduction electrons with mobility greater than 770 cm2/Vs at 100 kPa and 300K.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional doping methods are used to create n-type layers in diamond, then donor atoms are introduced to the diamond lattice, but vacancy defects are created that reduce conduction electron mobility
Solution Approach 1:
The patent uses helium ions as an intermediary substance during the doping process. The helium ions create displacement damage and vacancies in the diamond lattice that facilitate the incorporation of donor atoms (such as phosphorus, nitrogen, or sulfur) while the subsequent annealing process allows the helium to escape, leaving behind a reduced density of harmful vacancies compared to conventional doping methods
Solution Approach 2:
The patent changes the physical and chemical parameters of the doping process by performing ion implantation at room temperature followed by annealing at elevated temperatures (700-1100°C). This parameter change allows controlled creation and subsequent annealing out of vacancies, optimizing the balance between donor atom incorporation and vacancy defect reduction to achieve high electron mobility
2Quantity of substance
If high temperatures or strong electrical fields are applied to enhance carrier concentration, then conduction electron mobility improves, but device complexity and operational requirements increase
Solution Approach 1:
The patent enables the diamond semiconductor material to achieve high carrier concentration and mobility through its inherent crystal structure and optimized doping process, without requiring external high temperatures or strong electrical fields for operation. The material self-regulates its electrical properties through the controlled vacancy density achieved during fabrication, allowing room temperature operation with standard electrical conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of diamond semiconductors with improved n-type layers, achieving high electron mobility and carrier concentration at room temperature without requiring high temperatures or strong electrical fields, thus overcoming the limitations of existing technologies.
Implementation Method 1
introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks
Implementation Method 2
annealing the diamond lattice, wherein the introduction of the minimal amount of acceptor dopant atoms does not create a critical density of vacancies
Data Source
AI summary
Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond malarial having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.