Vertical Back-Gate Semiconductor Structure With Air-Gap Dielectric
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high integration and improved electrical characteristics due to the limitations of existing dielectric materials in spacing between conductive structures, which affect performance and integration density.
Innovation Solution
Incorporating a spacer structure with an air gap in the dielectric layer between the back gate electrode and the vertical channel region, utilizing a material with a low dielectric constant (low-κ) to reduce parasitic capacitance and enhance integration while maintaining electrical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dielectric layer with high dielectric constant is used between back gate electrode and vertical channel region, then electrical characteristics are improved, but integration density is reduced
Solution Approach 1:
The patent changes the dielectric constant parameter of the material between back gate electrode and vertical channel region from high-κ to low-κ (air gap with κ≈1). This parameter change reduces the dielectric strength, but allows for reduced spacing between conductive structures, thereby improving integration density while maintaining acceptable electrical characteristics through optimized structure design.
2Area of stationary object
If spacing between adjacent conductive structures is reduced for high integration, then integration density is improved, but parasitic capacitance increases
Solution Approach 1:
The patent introduces an air gap as an intermediary layer between adjacent conductive structures. This air gap mediator has low dielectric constant properties that reduce parasitic capacitance formation, allowing conductive structures to be placed closer together for high integration while minimizing the harmful capacitive coupling effect.
Solution Approach 2:
The air gap functions as a porous/void structure between conductive elements. This void space provides low dielectric constant characteristics (κ≈1) that reduce parasitic capacitance, enabling reduced spacing between conductive structures for improved integration density without suffering from harmful capacitive effects.
3Object-generated harmful factors
If air gap is introduced in dielectric structure for low-κ, then parasitic capacitance is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent extracts the dielectric material entirely from specific regions to create air gaps between conductive structures. By removing material rather than adding complex low-κ materials, the manufacturing process achieves parasitic capacitance reduction through simpler means - primarily involving etch stop layers and selective removal steps rather than sophisticated material deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high integration and improved electrical characteristics by reducing the distance between the back gate electrode and the vertical channel region, thereby improving controllability and stability of the semiconductor device.
Implementation Method 1
preventing performance degradation and reducing parasitic capacitance
Data Source
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AI summary
A semiconductor device includes a vertical pattern including a first source/drain region, a second source/drain region having a height higher than a height of the first source/drain region, and a vertical channel region between the first and second source/drain regions, a front gate structure facing a first side surface of the vertical pattern, and a back gate structure facing a second side surface of the vertical pattern, opposite to the first side surface of the vertical pattern. The front gate structure includes a gate electrode on the first side surface of the vertical pattern, and a gate dielectric layer including a portion disposed between the vertical pattern and the gate electrode. The back gate structure includes a back gate electrode on the second side surface of the vertical pattern, and a dielectric structure including a portion disposed between the vertical pattern and the back gate electrode. The dielectric structure includes an air gap.