Back-Gate Semiconductor Layout for Switchable Source-Drain Connection
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Solution Overview
Problem
Existing semiconductor devices lack the ability to switch the connection destination of the back gate contact region between the source region and the drain region, limiting their functionality and efficiency.
Innovation Solution
A semiconductor device is designed with a semiconductor chip having a first main surface and a second main surface, featuring a first drain region, a back gate region, a source region, a back gate contact region, and a gate electrode. The back gate contact region is electrically isolated from the source region, allowing the connection destination to be switched between the source region and the first drain region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the back gate contact region is electrically connected to the source region, then the device can prevent reverse current, but the chip size increases and on-breakdown voltage decreases
Solution Approach 1:
The back gate contact region is electrically isolated from the source region through a trench structure, segmenting the previously connected regions. This isolation allows independent control of the back gate contact region, enabling reverse current prevention without requiring additional chip area or compromising on-breakdown voltage.
2Adaptability or versatility
If the back gate contact region is electrically isolated from the source region, then the device can switch connection destinations and maintain high on-breakdown voltage, but the device complexity increases
Solution Approach 1:
A trench structure acts as an intermediary element between the back gate contact region and the source region. This trench provides electrical isolation while maintaining a simple geometric form that integrates naturally into the existing device architecture, avoiding complex additional structures.
3Reliability
If the back gate contact region is electrically isolated from the source region, then the on-breakdown voltage can be maintained high, but the manufacturing precision requirements increase
Solution Approach 1:
The trench structure is formed with specific local dimensions (depth and width) that are optimized for electrical isolation performance. By concentrating the isolation function in this localized structure with controlled dimensions, the patent achieves high on-breakdown voltage while maintaining manufacturable precision requirements.
Data Source
AI summary
A semiconductor device includes: a semiconductor chip having a first main surface and a second main surface opposite to the first main surface; a first drain region of first conductivity type formed in a surface layer portion of the first main surface; a back gate region of second conductivity type spaced apart from the first drain region in the surface layer portion of the first main surface; a source region of the first conductivity type spaced inward from a peripheral edge of the back gate region in a surface layer portion of the back gate region; a back gate contact region of the second conductivity type electrically isolated from the source region in the surface layer portion of the back gate region; and a gate electrode facing a channel region formed in the back gate region between the peripheral edge of the back gate region and the source region.