Semiconductor Devices TRIZ Cases

A three-layer reflective portion and light-transmissive conductive layer boost LED output power by reflecting light and reducing electrode absorption.

An inclined trench sidewall disperses edge electric fields in a trench gate MOSFET, raising breakdown voltage and reducing oxide stress.

Edge-spaced upper and lower power lines in the display periphery limit static damage to insulating layers and prevent wire short-circuits.

Particle beam irradiation adds point defects to tune SiC drift-region carrier concentration, reducing ON-resistance and breakdown-voltage variation.

Non-pyramid rear microstructures improve tunnel oxide uniformity, lower contact resistivity, and raise TOPCon solar cell efficiency.

A non-uniform fixed charge insulator in a trench semiconductor relaxes electric fields while accumulating carriers to cut on-resistance and raise breakdown voltage.

Separated silicon avalanche and germanium absorption regions cut optical loss, relax doping precision, and improve gain bandwidth.

Different barrier-height gate metal portions cut HEMT gate leakage, stabilize overdrive voltage, and sustain higher drain current.

A cyclic SiC cell layout with distinct end cells helps preserve impurity region profiles during deep ion implantation and maintain chip performance.

Electrical isolation of the back gate contact enables source-drain switching, combining reverse current and overcurrent protection on one chip.

A cavity-filled monocrystalline emitter replaces hydrogen sealing, improving base-emitter spacing control and material compatibility.

A through-hole reflector and offset insulation-hole layout boosts emitted light extraction by reducing absorption in the conductive member.

Two-step ridge gate etching cuts p-GaN HEMT etch damage and electric field concentration, helping reduce gate leak current.

A silicon and wide-bandgap hybrid structure raises breakdown voltage while lowering resistance by placing WBG material only in high-field regions.

Layered gate dielectrics and a protruding spacer raise integration density without tighter linewidths, reducing fabrication complexity and cost.

Different hole exposure areas in separate LED regions spread current more evenly, reducing n-electrode heating and extending service life.

A notched auxiliary electrode lets the cathode contact a compensation path, cutting IR drop in large-size top-emission OLED substrates.

An anti-type doping layer redirects drift-region current away from dielectric-damaged trench areas, reducing hot carriers, leakage, and reliability loss.

Thicker sidewall and corner gate oxide in a nanostructure transistor reduces electric field concentration and dielectric breakdown risk.

A surrounding contact layout and selective insulating openings improve UV light output, lower forward voltage, and even light distribution.

Overlapping RGB active layers on a shared substrate raise LED pixel density while preserving red emission efficiency and simplifying fabrication.

Dual field plate regions reshape the gate-drain electric field in HEMTs, improving gain and field uniformity under high voltage.

A cavity, dielectric lining, and multi-work-function contacts enable dual conduction modes while reducing off-state leakage currents.

Patterned contact electrodes pierce the light-emitting layer to lower cathode resistance, reducing IR drop and improving large-panel brightness uniformity.

Dual RF plasma etching improves crystallized polysilicon dummy gate uniformity, reducing line width roughness and gate shorts.

Front-side positive and negative contacts avoid back-side welding in fragile PV cells, cutting damage risk and manufacturing cost.

Using a κ-Al2O3 barrier on an AlN channel, this HEMT induces 2DEG to raise power density while improving heat dissipation.

A gate extension beside the active gate creates full contact landing on narrow transistors, cutting gate resistance and shorting risk.

A p-GaN gate with a lightly doped intermediate region suppresses gate leakage and avalanche breakdown while preserving drain current.

Additional gate runners connect dense trench gates outside the active cell, preserving cell pitch while limiting capacitance and conduction loss.

Merged spacers in self-aligned patterning widen the first word line and control select-gate spacing to reduce damage and improve memory yield.

A DBR stack tuned to reflect small-angle light and transmit part of larger-angle light helps Mini LEDs boost brightness while passing AOI testing.

Rounded SiC gate trench corners and a recessed gate electrode cut electric field crowding, protecting the gate oxide during MOSFET on-state operation.

Co-doped polysilicon passivated contacts cut front-side recombination and parasitic absorption while improving light transmittance in TOPCon cells.

Laterally spaced conductive elements with varied cross-sections improve current extraction while reducing busbar shading and power loss.

Gradually varied AlN/AlGaN/GaN superlattice stacks release mismatch stress, reduce crack lines, and improve GaN epitaxial quality.

A multilayer field plate insulator uses inner and outer dielectric regions to suppress electric field concentration, leakage current, and FP insulation stress.

Point-like conductive electrodes replace a light-absorbing contact layer to raise SWIR LED brightness, simplify fabrication, and lower forward voltage.

An insulating layer between sealing material and termination electrodes disperses ions during THB testing, suppressing corrosion and leakage.

A series JFET and monolithic voltage divider shield trench oxide from high drain voltage while keeping SiC MOSFET on-resistance low.

GaAs/GaAsSb core-shell nanowire APDs on silicon enable low-voltage near-infrared detection with higher gain, faster response, and CMOS compatibility.

A graded well and drift-region layout prevents punch through, limits doping compensation, and reduces hot-carrier damage.

A recessed split-gate with an insulator scatters local electric fields to raise breakdown voltage while reducing leakage and on-resistance.

An oppositely doped guard ring inside the SPAD well redistributes edge electric fields to prevent premature breakdown and diode degradation.

A thermal plug creates a dedicated heat path from the HEMT active region, improving high-frequency electrical performance and reliability.

Polished bonding surfaces plus staggered incisions and notches improve phosphor plate joining accuracy and semiconductor light emitter yield.

Bandgap-engineered charge-passage regions curb charge back-migration while enabling erase of deeply trapped charges in vertical NAND cells.

Line trenches with all-surface gate dielectric improve surface breakdown in field effect transistors without complex LDD structures.

Metal pillars and a straddling metal layer replace vias in a HEMT, lowering gate resistance while avoiding alignment errors and cracking.

An oxide-based liner film in the contact trench cuts parasitic capacitance, enabling denser multi-gate transistors with stable electrical control.

An alloy band-pass optical film plus a transparent protection layer prevents electrode shorts while improving photodiode tolerance and cost.

A silicon-nitrogen-hydrogen edge layer improves blocking behavior under humidity and temperature stress, extending power semiconductor life.

An intermediate nitride layer with tuned In composition blocks red-light absorption, improving crystal quality and stacked micro LED color emission.

A hollow epitaxial multi-gate HEMT controls the 2DEG channel to combine enhancement-mode control with depletion-mode conduction.

Inclined contact electrode edges keep dielectric protective layers uniform, improving LED sealing, conductivity, and moisture resistance.

A p-type Cu2O layer improves hole injection in high-In InGaN LEDs, lowering operating voltage and avoiding high-temperature damage.

Mechanical breaking forms rough micro-LED sidewalls without etching defects, suppressing current leakage and preserving luminous efficiency.

A T-shaped HKMG gate with U-shaped metal layers cuts planarization steps, lowers gate resistance, and supports sub-26 nm scaling.

A wrap-around top contact embedded in the top source drain boosts contact area and lowers resistance without causing shorts in tight-pitch vertical transistors.

A dislocation suppression layer lets a thin p-type contact layer preserve UV light output while limiting current concentration and metal intrusion.

A raised protection structure shields LED contact pads from friction and contamination during packaging and transport, preserving conductivity.

An asymmetric p-type DMOS layout maintains high-voltage rating in scaled nodes while reducing mask count and fabrication complexity.

A gate-contact trench MOSFET case showing how local field oxide thickness control prevents thinning, preserves electric fields, and simplifies contact formation.

An inclined substrate guides incident light obliquely through the absorbing layer, extending optical path length while reducing polarization dependency.

Segmented gate regions place symmetric sources in a trench gap, easing electrode filling while reducing defects and capacitance.

FD-SOI isolation and a channel structure layer cut buried word line coupling, improving BCAT uniformity and electrical reliability.

An intrinsic polysilicon contact gap keeps electrodes from breaching the tunneling oxide, cutting recombination and raising solar cell efficiency.

A doped GaN bilayer enables uniform mesa porosification across large substrates, reducing edge-centre effects and relaxing InGaN stress.

A fluorine compound encapsulant boosts LED light transmission across UV to infrared bands while resisting UV-induced cracking.

Varying barrier thickness and edge recesses equalize 2DEG channel formation in HEMTs, removing hump-like I-V behavior.

A strained InxAlyGa1-x-yN nucleation layer helps thin GaN on SiC keep low roughness, strong crystal quality, and better 2DEG behavior.

A vertical n-side heat path bypasses the insulating layer, improving high-current heat dissipation while reducing crack risk.

A two-layer Mg-doped p-GaN body region lowers body-electrode contact resistance while limiting on-resistance and etching damage.

Combining AlScN ferroelectric and p-type AlScOC layers stabilizes ferroelectric response at scaled gate thickness for oxide-based FeFETs.

Simultaneous dual gate-oxide formation tunes field-plate thickness in LDMOS, improving electric field distribution and breakdown voltage without extra masks.

An embedded emitter, transmissive covers, and molding compound reduce CTE mismatch failures and package thickness in optical sensor packaging.

Alternating wide and narrow metal structures in a Schottky diode cut reverse leakage while improving surge current handling and breakdown voltage.

Selective removal of an energy-removable layer forms gate contact openings without an etch stop layer, lowering short risk and improving yield.

A Schottky gate stack adds a diffusion-blocking metal layer to protect the 2DEG channel from gate contamination, leakage, and breakdown.

An AlN barrier layer limits ion diffusion and improves carrier tunneling, lowering p-type GaN resistivity and current crowding.

Dual infrared-emission layers boost space solar cell cooling while removing heavy cover glass and simplifying assembly.

A high-k patterned dielectric creates a stepped field plate in HEMTs, redistributing electric field to raise breakdown voltage with fewer masks.

Programmable binning in a hybrid intensity and EVS pixel array improves low-light event detection while preserving fast pixel response.

Selective removal of an energy-removable layer between gates forms contact openings without an etch stop layer, reducing shorts and improving yield.

A gate intersection trench links split gate electrodes to the emitter potential, preventing floating electrodes and withstand voltage defects.

Layered AlGaInP contact and window compositions cut red LED light absorption while lowering forward voltage and boosting luminous efficiency.

Rounded fin corners under the spacer and a wider fin base improve width control, prevent collapse, and enable tighter FinFET pitch.

Centrifugal curing flattens sealing resin in an LED package recess, reducing chromaticity unevenness and improving light extraction.

A bridge-electrode and pixel-electrode layout cuts external light reflectance without thick polarizers, preserving image clarity and light efficiency.

An asymmetric TFT active layer under contact holes improves etch uniformity and lowers contact resistance, reducing OLED spot defects.

Ion implantation isolates adjacent vertical LED dies without trenches or PI adhesive, enabling tighter spacing, flatter surfaces, and stronger electrodes.

A single metal electrode creates n-type and p-type 2D contacts through Fermi-level pinning and depinning, simplifying fabrication.

A lower-level bit line and aligned peripheral gate raise memory cell density while stabilizing vertical transistor operation and limiting floating body effects.

A second dielectric trench beside drain STI deepens the current path and reduces sharp-corner interference in HV devices.

A segmented SOI T-gate uses localized body contact to cut parasitic capacitance, lower power use, and suppress floating body effects.

A silicon germanium core with silicon cladding creates intrinsic channel strain, boosting MOSFET carrier mobility without external stressors.

A preformed trench enables deep ion implantation in SiC epitaxial layers, reducing lattice damage while improving surge resistance and protection.