Gate Contact Opening Using an Energy-Removable Spacer Layer
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability due to issues related to the complexity of forming contact structures, particularly with the need for an etching stop layer which can lead to shorts.
Innovation Solution
A semiconductor device design that includes a substrate with a first and second gate structure, a layer of energy-removable material between them, and a dielectric layer covering the structures, allowing for selective removal of the energy-removable material to form a contact opening without the need for an additional etching stop layer, thereby improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an etching stop layer is used to form contact structures, then the contact structure formation process is enabled, but the risk of shorts increases and yield decreases
Solution Approach 1:
The patent removes the etching stop layer from the contact structure formation process entirely. Instead of using a dedicated stop layer, the invention uses the gate structure itself as the etch stop reference, extracting the stop layer function from a separate component and integrating it into the existing gate structure, thereby eliminating the short risk associated with stop layers while maintaining process capability
Solution Approach 2:
The gate structure serves multiple functions: it acts as both the functional gate electrode and the etch stop reference for contact hole formation. This multi-functionality eliminates the need for a separate etching stop layer, reducing structural complexity and potential failure points while maintaining the necessary process control
2Productivity
If the device is scaled down to improve computing ability, then computing performance is enhanced, but manufacturing complexity and quality issues increase
Solution Approach 1:
By removing the etching stop layer from the scaled-down device structure, the patent reduces the number of manufacturing steps and materials required. This extraction of unnecessary components simplifies the manufacturing process while maintaining the functional requirements of the scaled-down device, directly addressing the increased manufacturing complexity issue
Solution Approach 2:
Instead of adding a stop layer to enable contact formation in scaled devices, the invention inverts the approach by using the gate structure itself as the etch stop reference. This reversal eliminates the need for additional process steps and materials, reducing manufacturing complexity while supporting continued device scaling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the yield of semiconductor devices by eliminating the need for an etching stop layer, reducing the risk of shorts and improving the overall performance and reliability of the device.
Implementation Method 1
forming a first opening along the dielectric layer to expose the layer of energy-removable material; removing the layer of energy-removable material to form a contact opening communicated with the first opening
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first gate structure positioned on the substrate; a second gate structure positioned on the substrate and next to the first gate structure; a layer of energy-removable material positioned on the substrate and between the first gate structure and the second gate structure; a dielectric layer positioned on the substrate and covering the first gate structure and the second gate structure; and a first opening positioned along the dielectric layer to expose the layer of energy-removable material.