Semiconductor Diode Structure for Low Leakage and Dual Conduction
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Solution Overview
Problem
Existing power semiconductor diode structures have various disadvantages that need to be overcome, such as inefficiencies in current conduction and switching modes, and high off-state leakage currents.
Innovation Solution
A semiconductor diode structure comprising a first doped semiconductor region of a first conductivity type, a second doped semiconductor region of a second conductivity type, a first conductive region with a through opening, a second conductive region coating the upper surface, a cavity with a dielectric region, and a third conductive region coating the dielectric region, which enables two conduction modes and low off-state leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional single-mode diode structures are used, then the device complexity is low, but the current conduction efficiency and switching performance are insufficient
Solution Approach 1:
The diode structure is segmented into multiple functional regions including a first conductive region with a through opening, a second conductive region, a cavity region, and a third conductive region. Each region performs a specific function in enabling two distinct conduction modes, thereby improving current conduction efficiency while managing structural complexity through functional segmentation.
Solution Approach 2:
The diode is designed to operate in two dynamic conduction modes: a first conduction mode through the first conductive region and a second conduction mode through the second and third conductive regions. This dynamic operation allows the device to adapt its conduction path based on operating conditions, enhancing overall efficiency.
2Reliability
If conventional diode structures are used, then the manufacturing process is simple, but off-state leakage currents are high
Solution Approach 1:
The diode structure implements local quality variations through different conductive regions with specific material compositions and work functions. The second conductive region has a work function smaller than the first conductive region, and the third conductive region has a work function smaller than or equal to 5 V, creating localized electronic properties that reduce off-state leakage currents while maintaining manufacturability.
Solution Approach 2:
The cavity region filled with dielectric material acts as an intermediary structure between the second and third conductive regions. This dielectric-filled cavity serves as a mediator to control electrical fields and reduce leakage paths, improving reliability without excessively complicating the manufacturing process.
3Reliability
If conventional conductive regions are used, then the material selection is limited, but the work function optimization for leakage reduction is insufficient
Solution Approach 1:
The diode employs composite material structures with different conductive regions made from materials having different work functions. The first conductive region, second conductive region, and third conductive region use different materials selected to optimize work function values, enabling precise control of electron emission and leakage currents while maintaining material selection flexibility.
Solution Approach 2:
The invention optimizes the work function parameter of conductive region materials to control leakage currents. The second conductive region is designed with a work function smaller than the first conductive region, and the third conductive region has a work function smaller than or equal to 5 V, representing specific parameter changes in material properties to achieve leakage reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diode structure achieves efficient current conduction and switching with two distinct conduction modes, and significantly reduces off-state leakage currents, enhancing overall performance and reliability.
Implementation Method 1
a dielectric region coating the lateral walls and the bottom of the cavity
Implementation Method 2
the second conductive region has a work function smaller than that of the first conductive region; the third conductive region has a work function smaller than or equal to 5 V
Data Source
AI summary
A semiconductor diode, including: a first doped semiconductor region of a first conductivity type; a second doped semiconductor region of a second conductivity type opposite to the first conductivity type, arranged on top of and in contact with the upper surface of the first semiconductor region; a first conductive region arranged on top of and in contact with the upper surface of the second semiconductor region, the first conductive region comprising a through opening opposite a portion of the second semiconductor region; a second conductive region made of a material different from that of the first conductive region, coating the upper surface of the second semiconductor region opposite said opening; a cavity extending through the second conductive region and through the second semiconductor region opposite a portion of said opening; a dielectric region coating the lateral walls and the bottom of the cavity; a third conductive region coating the dielectric region on the lateral walls and at the bottom of the cavity, the third conductive region being further electrically in contact with the first and second conductive regions.