Semiconductor device and method of manufacturing semiconductor device
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Solution Overview
Problem
In semiconductor devices, the metal used in the termination structure corrodes during the Temperature Humidity Bias (THB) test, leading to breaks or increases in breakdown voltage leakage.
Innovation Solution
A semiconductor device configuration that includes a semiconductor substrate with specific termination regions and insulating layers, where the sealing material is in direct contact with the upper surface of the second insulating layer, dispersing ions and thereby suppressing corrosion of the metal termination electrode layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal termination electrode layers are used in the termination structure, then electrical conductivity and functionality are improved, but corrosion occurs during THB tests leading to breaks or increased breakdown voltage leakage
Solution Approach 1:
A second insulating layer is introduced as an intermediary between the metal termination electrode layers and the sealing material. This insulating layer prevents direct contact between metal ions and the sealing material, thereby suppressing corrosion reactions while maintaining the electrical functionality of the termination structure
Solution Approach 2:
The patent employs a simple insulating layer structure that can be easily manufactured and applied, providing effective corrosion protection without requiring complex or expensive materials. The insulating layer acts as a sacrificial barrier that prevents corrosion of the valuable metal electrode layers
2Reliability
If the sealing material is in direct contact with metal termination electrode layers, then sealing and protection are improved, but ion dispersion occurs during THB tests causing corrosion
Solution Approach 1:
The second insulating layer serves as a mediator between the sealing material and metal electrode layers. It allows the sealing material to maintain its protective sealing function while preventing the direct interaction that would cause ion dispersion and corrosion during THB testing
Solution Approach 2:
The patent extracts the harmful direct contact interface between sealing material and metal electrodes by removing it and replacing it with an insulating layer, thereby eliminating the corrosion pathway while preserving the sealing function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively suppresses corrosion of the metal termination electrode layers during THB tests, maintaining the reliability and breakdown voltage of the semiconductor device.
Implementation Method 1
ions generated in the outermost first termination semiconductor layer or the second termination semiconductor layer during the THB test are dispersed in the sealing material as they move on the upper surface of the second insulating layer
Data Source
AI summary
An object of the present disclosure is to suppress corrosion of metal used in a termination structure in a semiconductor device. A semiconductor substrate includes a plurality of first termination semiconductor layers of a first conductivity type provided in a first termination region, and a second termination semiconductor layer of a second conductivity type provided in a second termination region. A semiconductor device includes a first insulating layer provided in the first termination region, a plurality of first termination electrode layers electrically connected to the plurality of first termination semiconductor layers, a second termination electrode layer electrically connected to the second termination semiconductor layer, and a second insulating layer contacting with an outermost first termination semiconductor layers and the second termination semiconductor layer.