SWIR LED Electrode Layout for Higher Brightness and Lower Voltage
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Solution Overview
Problem
Conventional short-wave infrared light emitting diodes (SWIR LEDs) face challenges with low brightness, complex manufacturing processes, high costs, and excessive forward voltage due to light absorption effects and structural limitations in the carbon-doped gallium phosphide epitaxial layer.
Innovation Solution
A high-brightness light emitting diode structure is developed, featuring multiple point-like conductive electrodes with a dielectric layer and an epitaxial composite layer. The epitaxial composite layer includes a first semiconductor layer, a light-emitting layer, and a third semiconductor layer electrically connected to a carbon-doped gallium arsenide epitaxial layer, which replaces the traditional three-layer structure, simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a carbon-doped gallium phosphide epitaxial layer is used as a P-type ohmic-contact layer, then electrical connection is achieved, but light absorption effect increases and brightness decreases
Solution Approach 1:
The patent divides the ohmic-contact layer into multiple discrete point-like conductive electrodes instead of using a continuous carbon-doped gallium phosphide epitaxial layer. This segmentation reduces the total area of light-absorbing material while maintaining electrical connection functionality, thereby improving brightness without sacrificing electrical contact reliability.
Solution Approach 2:
The patent applies different properties to different regions: the point-like conductive electrodes provide localized electrical connection where needed, while the surrounding areas remain transparent to light. This local differentiation allows the structure to simultaneously achieve good electrical contact and high light transmission, resolving the contradiction between reliability and brightness.
2Stability of the object's composition
If conventional three-layer structure with transition layer is used, then lattice mismatch is adjusted, but manufacturing process becomes complex and cost increases
Solution Approach 1:
The patent removes the transition layer from the conventional three-layer structure, simplifying the device to an epitaxial composite layer directly connected to point-like conductive electrodes. This extraction of the transition layer reduces manufacturing complexity and cost while maintaining lattice compatibility through direct epitaxial growth of the simplified structure.
3Ease of operation
If conventional light emitting diode structure is used, then current spreading is achieved, but forward voltage becomes excessive
Solution Approach 1:
The patent changes the structural parameters of the contact layer from a continuous epitaxial layer to discrete point-like electrodes, and modifies the material composition of the epitaxial composite layer. These parameter changes reduce the forward voltage by improving carrier injection efficiency while the point-like electrode distribution maintains current spreading across the active region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new structure enhances light extraction efficiency, significantly improving brightness while reducing production costs and forward voltage, thus addressing the limitations of conventional SWIR LEDs.
Implementation Method 1
Each point-like conductive electrode includes an ohmic-contact metal layer and a carbon-doped gallium arsenide epitaxial layer
Implementation Method 2
The dielectric layer is disposed around each point-like conductive electrode
Implementation Method 3
Light Emitting Diode (hereinafter referred to as LED) has the advantages of high brightness
Implementation Method 4
the light-emitting layer, and a third semiconductor layer electrically connected to the carbon-doped gallium arsenide epitaxial layer
Implementation Method 5
an epitaxial composite layer... the epitaxial composite layer includes a first semiconductor layer, a light-emitting layer, and a third semiconductor layer
Data Source
AI summary
The present invention relates to a light emitting diode (LED) which comprises multiple point-like conductive electrodes, a dielectric layer, and an epitaxial composite layer. The dielectric layer is disposed around each point-like conductive electrode, and the epitaxial composite layer is disposed both on the point-like conductive electrodes and the dielectric layer. Each point-like conductive electrode includes an ohmic-contact metal layer and a carbon-doped gallium arsenide epitaxial layer. The carbon-doped gallium arsenide epitaxial layer is disposed on the ohmic-contact metal layer and electrically connected to the epitaxial composite layer.