HEMT Thermal Plug Structure for High-Frequency Heat Dissipation
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Solution Overview
Problem
High-electron-mobility transistors (HEMTs) face challenges in efficiently managing heat dissipation, which affects their electrical performance and reliability, especially at high frequencies.
Innovation Solution
Incorporating a thermal plug extending from the top side of the semiconductor substrate into the active region of the HEMT, which helps in removing dissipated heat and improving electrical and reliability performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If HEMTs operate at high frequencies and high power, then electrical performance is improved, but heat dissipation becomes insufficient
Solution Approach 1:
The patent introduces a thermal plug structure that segments the heat dissipation path by creating a dedicated thermal conduction channel separate from the electrical operation paths. The thermal plug extends from the active region through the substrate to the back surface, dividing the substrate into front and back regions for independent thermal and electrical management.
Solution Approach 2:
The thermal plug acts as an intermediary element between the heat-generating active region and the substrate back surface. This intermediary structure provides a low-thermal-resistance pathway that mediates heat transfer, allowing efficient heat removal without interfering with the electrical operation of the HEMT.
2Reliability
If conventional HEMT structures are used, then device simplicity is maintained, but electrical performance degrades due to poor heat management
Solution Approach 1:
The thermal plug introduces local quality changes by creating a specific region with enhanced thermal conduction properties. The plug is positioned locally at the active region and extends vertically through the substrate, providing localized heat removal capability without requiring global structural modifications to the HEMT.
Solution Approach 2:
The thermal plug adds a vertical dimension to heat dissipation by extending from the active region through the substrate thickness to the back surface. This three-dimensional thermal conduction path complements the planar electrical structure, providing an additional spatial dimension for thermal management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermal plug effectively enhances heat dissipation, leading to improved electrical performance and reliability of HEMTs, particularly at high frequencies.
Implementation Method 1
a thermal plug extending from a top side of the semiconductor substrate into an active region of the semiconductor substrate
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to a transistor with a thermal plug and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure over the semiconductor substrate; a source region on a first side of the gate structure; a drain region on a second side of the gate structure; and a thermal plug extending from a top side of the semiconductor substrate into an active region of the semiconductor substrate.