Trench Semiconductor Structure With Fixed Charge Field Shaping
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in optimizing the breakdown voltage and on-resistance due to the concentration of electric fields, which affects the overall performance and efficiency of the device.
Innovation Solution
The semiconductor device incorporates a trench structure with a gate electrode, a conductive member, and an insulating member with a fixed charge distribution. The insulating member is divided into regions with varying fixed charge densities, which helps in accumulating carriers and relaxing the electric field, thereby reducing on-resistance and increasing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a trench structure with gate electrode and conductive member is implemented, then breakdown voltage is improved, but on-resistance increases due to electric field concentration
Solution Approach 1:
The insulating member is divided into three regions with different fixed charge densities: first region (higher density) between gate electrode and second surface, second region (lowest density) in the middle, and third region (higher density) near the conductive member. This non-uniform fixed charge distribution creates localized electric field modulation that simultaneously achieves high breakdown voltage and low on-resistance by optimizing carrier accumulation in specific zones.
Solution Approach 2:
The patent changes the parameter of fixed charge density distribution within the insulating member from uniform to non-uniform. By controlling the fixed charge density to be highest in the first and third regions and lowest in the second region, the electric field distribution is optimized to reduce on-resistance while maintaining high breakdown voltage characteristics.
2Object-affected harmful factors
If fixed charge density is increased in the insulating member, then on-resistance is reduced through carrier accumulation, but breakdown voltage may be compromised
Solution Approach 1:
Instead of uniformly increasing fixed charge density throughout the insulating member, the patent applies high fixed charge density locally in the first region (near gate electrode) and third region (near conductive member), while maintaining low fixed charge density in the second region (middle). This localized approach reduces on-resistance through carrier accumulation at critical interfaces while preserving breakdown voltage by avoiding excessive charge in the middle region.
Solution Approach 2:
The insulating member is segmented into three distinct regions with different fixed charge density characteristics. This segmentation allows independent optimization of each region's function: the first region for carrier accumulation near the gate, the second region for electric field relaxation, and the third region for carrier accumulation near the conductive member, thereby simultaneously achieving low on-resistance and high breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the fixed charge distribution in the insulating member effectively reduces the on-resistance and enhances the breakdown voltage, improving the overall performance and efficiency of the semiconductor device.
Implementation Method 1
an insulating member positioned between the gate electrode and the semiconductor layer, between the conductive member and the semiconductor layer, and between the gate electrode and the conductive member, the insulating member including a fixed charge
Data Source
AI summary
An insulating member includes a fixed charge. The insulating member includes a first insulating part. The first insulating part includes a first region, a second region, and a third region. The first region is positioned between a gate electrode and the second region in a first direction. The second region is positioned between the first region and the third region in the first direction. The third region is positioned between the second region and a second surface in the first direction. A density of the fixed charge is greater in the first region than in the second region.