Silicon-WBG Hybrid Component for High-Voltage Low-Resistance Operation
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Solution Overview
Problem
The challenge in fabricating semiconductor components is to achieve higher performance while maintaining reliability, particularly in operating at higher potentials with lower resistances.
Innovation Solution
A microelectronic device is developed with a hybrid component that integrates a silicon portion with a wide bandgap (WBG) structure. The WBG structure is formed on top of the silicon, utilizing WBG semiconductor material with a bandgap energy greater than silicon, and includes features like metal silicide and an interface layer to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If semiconductor components are designed to operate at higher potentials, then performance is improved, but reliability deteriorates due to increased breakdown risk
Solution Approach 1:
The patent employs a hybrid structure combining silicon semiconductor material with wide bandgap semiconductor material (such as silicon carbide or gallium nitride). The wide bandgap material is positioned in the high-field region between the drift region and drain electrode, where it provides superior breakdown resistance due to its higher critical electric field strength, while the silicon portion maintains the device's electrical performance and manufacturability. This composite approach allows the device to operate at higher potentials without sacrificing reliability.
2Power
If semiconductor components are designed to provide lower resistances, then performance is improved, but manufacturing complexity increases
Solution Approach 1:
The semiconductor device is divided into distinct functional regions: a silicon-based portion for general device operation and a wide bandgap portion specifically for high-field stress areas. This segmentation allows each region to be optimized independently - the silicon portion can be fabricated using conventional processes to achieve low resistance, while the wide bandgap portion is strategically placed only where high breakdown voltage is needed, reducing overall manufacturing complexity compared to making the entire device from wide bandgap material.
Solution Approach 2:
The wide bandgap semiconductor material is applied locally in the high-field region rather than throughout the entire device structure. This localized approach provides the necessary breakdown resistance exactly where the electric field is strongest (between the drift region and drain), while avoiding the need to complexify the entire device fabrication process. The rest of the device can be manufactured using simpler, more established silicon-based processes.
Data Source
AI summary
A microelectronic device includes a hybrid component. The microelectronic device has a substrate including silicon semiconductor material. The hybrid component includes a silicon portion in the silicon, and a wide bandgap (WBG) structure on the silicon. The WBG structure includes a WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon. The hybrid component has a first current terminal on the silicon, and a second current terminal on the WBG semiconductor structure. The microelectronic device may be formed by forming the silicon portion of the hybrid component in the silicon, and subsequently forming the WBG structure on the silicon.