Field Plate Insulating Structure for Electric Field Suppression
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Solution Overview
Problem
Existing semiconductor devices with dot-shaped field plate electrodes (FP electrodes) face challenges in suppressing electric field concentration at the FP electrode, which can lead to increased leakage current and reduced reliability of the FP insulating part.
Innovation Solution
The semiconductor device incorporates a multilayer FP insulating part with a first insulating region having a higher dielectric constant and a second insulating region with a lower dielectric constant, positioned outside the first insulating region. This configuration reduces the electric field intensity at the first insulating region and suppresses electric field concentration at the FP electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dot-shaped field plate electrode is used to increase breakdown voltage and reduce on-resistance, then the electrical performance is improved, but electric field concentration occurs at the FP electrode leading to increased leakage current and reduced reliability
Solution Approach 1:
The patent applies local quality by creating a multilayer insulating structure with different dielectric constants in different regions around the FP electrode. The first insulating part with higher dielectric constant is positioned closer to the electrode where electric field concentration occurs, while the second insulating part with lower dielectric constant is positioned farther away. This spatial variation in insulating properties locally addresses the electric field concentration problem without affecting the overall electrode structure.
Solution Approach 2:
The patent uses composite materials by combining multiple insulating layers with different dielectric constants (first insulating part and second insulating part). This composite insulating structure allows the system to simultaneously achieve high breakdown voltage (through the higher dielectric constant material near the electrode) and reduced electric field concentration (through the lower dielectric constant material farther away), resolving the technical contradiction.
2Object-affected harmful factors
If a single-layer insulating structure is used around the FP electrode, then the structure is simple, but it cannot effectively suppress electric field concentration
Solution Approach 1:
The patent segments the insulating part into multiple distinct layers (first insulating part and second insulating part) with different dielectric constants. This segmentation allows each layer to perform a specific function: the first layer with higher dielectric constant addresses breakdown voltage requirements, while the second layer with lower dielectric constant addresses electric field concentration. The segmented structure is more complex than a single layer but provides superior performance in suppressing electric field concentration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively reduces electric field concentration at the FP electrode, thereby suppressing leakage current and enhancing the reliability of the FP insulating part, while maintaining or improving breakdown voltage and reducing on-resistance.
Implementation Method 1
The dielectric constant of the first insulating region is less than the dielectric constant of the second insulating region
Data Source
AI summary
A semiconductor device includes first to fourth electrodes, first to third semiconductor regions, and first and second insulating parts. The first insulating part is located between the second semiconductor region and the third electrode. The fourth electrode is arranged with the first and second semiconductor regions. The second insulating part is located between the first semiconductor region and the fourth electrode and between the second semiconductor region and the fourth electrode. the second insulating part includes first and second insulating regions. The first insulating region surrounds the fourth electrode and contacts the fourth electrode. The second insulating region surrounds the first insulating region and contacts the first insulating region. A dielectric constant of the second insulating region is less than a dielectric constant of the first insulating region.