Segmented Schottky Diode Structure for Low Leakage and Surge Handling
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Solution Overview
Problem
Conventional Schottky diode elements experience significant leakage current and are unable to handle surge currents, limiting their reliability and practical applications.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with an epitaxial layer, doped regions, and metal structures that form a Schottky diode with enhanced metal and doped region configurations to reduce surge current and increase breakdown voltage under reverse bias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional Schottky diode element is used, then the starting voltage is lower and reaction speed is faster, but serious leakage current occurs under reverse bias and the element cannot bear surge current
Solution Approach 1:
The patent divides the Schottky diode structure into multiple segments by introducing alternating first and second metal structures with different widths in the epitaxial layer. This segmentation creates multiple localized junctions that individually control electrical characteristics, allowing the overall structure to reduce leakage current while maintaining low forward voltage drop.
Solution Approach 2:
The patent applies local quality by creating regions with different metal structure widths (first width for wider structures, second width for narrower structures) within the same epitaxial layer. These local variations in geometry create different electrical properties in different regions, enabling simultaneous optimization of forward conduction and reverse blocking characteristics.
2Reliability
If a conventional Schottky diode element is used, then the structure is simple, but the element cannot handle surge current generated at startup
Solution Approach 1:
The segmented structure with multiple metal structures distributes the surge current across multiple parallel paths. When surge current occurs, the current is divided among the first and second metal structures, preventing any single junction from being overwhelmed and improving overall surge current handling capability.
Solution Approach 2:
The patent designs the metal structures with specific width ratios and spacing to create built-in current distribution characteristics that cushion against surge current before it can damage the device. The geometric configuration预先 (in advance) establishes safe current density limits.
3Power
If the metal structures are made wider to reduce resistance, then forward conduction improves, but reverse breakdown voltage decreases
Solution Approach 1:
The patent uses local quality by assigning different widths to different metal structures: wider first metal structures provide low-resistance paths for forward current, while narrower second metal structures maintain higher breakdown voltage. Each local region is optimized for its specific function within the overall device performance requirements.
Solution Approach 2:
The patent introduces asymmetry by using metal structures with distinctly different widths (first width greater than second width) in an alternating pattern. This asymmetric design allows the structure to exhibit different electrical characteristics for forward bias versus reverse bias, optimizing both conduction efficiency and breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces surge current during forward bias and increases breakdown voltage during reverse bias, enhancing the reliability of the Schottky diode element.
Implementation Method 1
A Schottky diode element is a diode consisted of a metal-semiconductor junction
Implementation Method 2
The first doped regions are disposed in the epitaxial layer and are of a second conductivity type different from the first conductivity type
Data Source
AI summary
A semiconductor device, which comprises a semiconductor substrate, an epitaxial layer, first metal structures, first doped regions, second metal structures, second doped regions, a conductive layer and a Schottky layer. The epitaxial layer is disposed on the semiconductor substrate. The first metal structures are disposed in the epitaxial layer. The first metal structures extend along a first direction and have a first width in a second direction. The first doped regions are disposed in the epitaxial layer and extend from below each first metal structure to the sidewall of each first metal structure. The second metal structure is disposed in the epitaxial layer. The second metal structures extend along the first direction and have a second width in the second direction, wherein the first width is larger than the second width. The conductive layer is disposed under the semiconductor substrate, and the Schottky layer is disposed on the epitaxial layer.