Edge Termination Layer Composition for Humidity-Stable Power Semiconductors
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Solution Overview
Problem
Semiconductor devices, particularly high-power modules like IGBT diodes and MOSFETs, are vulnerable to environmental stress such as humidity and temperature variations, which affect their material properties and blocking behavior, leading to reduced reliability and lifespan.
Innovation Solution
Incorporating a layer structure in the edge termination region composed of silicon, nitrogen, and hydrogen, with specific atomic ratios and hydrogen content, to enhance electrical conductivity and resistance to environmental stress, thereby improving the device's blocking characteristics and longevity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional packaging is used to protect power semiconductor devices, then the device structure remains simple, but the devices are vulnerable to environmental stress such as humidity and temperature variations
Solution Approach 1:
The patent applies local quality by creating a specific layer structure (first layer and second layer) with distinct compositions in the edge termination region. The first layer has a silicon-to-nitrogen atomic ratio of at least 3.3 to 4 and contains at most 16 atomic percent hydrogen, while the second layer has different composition characteristics. This localized structural modification in the edge termination region provides enhanced environmental stress resistance without requiring complex packaging, thereby resolving the contradiction between reliability improvement and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed layer structure within the edge termination region of semiconductor devices enhances their resistance to environmental stress, improving the devices' blocking capabilities and extending their lifespan by maintaining optimal electrical conductivity across varying temperatures.
Implementation Method 1
an electrical conductivity of the first layer exhibits a local or global maximum between 273K and 373K and/or wherein the electrical conductivity of the first layer exhibits a falling slope with increasing at a specified maximum working temperature
Data Source
AI summary
The application refers to a semiconductor device including: a semiconductor body having a first surface and a second surface; an active region having at least one semiconductor cell configured to conduct a load current between the first surface and the second surface; an edge termination region separating the active region from a chip edge; and a first layer within at least a part of the edge termination region. The first layer includes silicon, nitrogen and hydrogen. In atomic numbers, a ratio of the silicon to the nitrogen is at least 3.3 to 4 in at least a portion of the first layer. At least the portion of the first layer includes at most 16 percent hydrogen in atomic numbers.