Micro-LED Sidewall Structure Without Etching-Induced Leakage
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Solution Overview
Problem
The manufacturing process of light-emitting diodes, particularly for micro-LEDs, often results in lattice defects on the side walls of semiconductor stack layers due to etching, leading to significant edge current leakage and reduced luminous efficiency, as the side wall area becomes a larger proportion of the light-emitting layer area.
Innovation Solution
A light-emitting diode structure is created with a semiconductor stack layer that includes a first and second type semiconductor layer and an active layer, where the side walls are formed by physically breaking the stack apart using a force applying means, resulting in a rough surface without etching-induced defects, thereby preventing side wall effects and enhancing luminous efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If photolithography and etching process is used to create light-emitting diode structures, then the semiconductor stack layer can be divided into independent structures, but lattice defects are generated on the side wall causing edge current leakage and reduced luminous efficiency
Solution Approach 1:
The patent extracts and removes the harmful etching process from the manufacturing flow. Instead of using photolithography and etching to create independent LED structures, the invention uses a mechanical breaking method that physically separates the semiconductor stack into individual structures without chemical etching, thereby eliminating the source of side wall defects and current leakage
Solution Approach 2:
The patent replaces the chemical etching system with a mechanical breaking system. Rather than using chemical reactions to remove material and define structures, the invention applies mechanical force to physically break the semiconductor stack into independent LED structures, substituting a mechanical process for a chemical one to avoid etching-induced damage
2Area of moving object
If the light-emitting diode chip size is reduced to create micro-LEDs, then the device becomes more compact and suitable for advanced applications, but the side wall area to light-emitting layer area ratio increases causing significant side wall effects that greatly affect luminous efficiency
Solution Approach 1:
The patent extracts and eliminates the side wall effect as a harmful factor by removing the etching process that creates defective side walls. In micro-LEDs where side wall area becomes significant, this extraction of the harmful etching step prevents the generation of lattice defects on side walls, maintaining high luminous efficiency even as device size is reduced
Solution Approach 2:
The patent changes the key parameter of side wall quality from etched (defective) to mechanically broken (intact). By altering how the side wall is formed—from chemical etching to mechanical breaking—the crystal structure integrity is preserved, changing the side wall from a harmful feature to a neutral or beneficial feature that does not degrade luminous efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses non-radiative recombination and current leakage, significantly increasing the luminous efficiency and brightness of the light-emitting diode structure by eliminating etching-induced side wall effects, especially beneficial for micro-LEDs where the side wall area is more significant.
Implementation Method 1
A force applying means is provided to physically break the first portion and the second portion apart from each other
Data Source
AI summary
A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.