Hybrid Pixel Binning for Low-Light EVS Event Detection
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Solution Overview
Problem
Current imaging sensors face challenges in enhancing event detection in typical contrast and low light conditions, particularly in applications requiring object feature detection, where existing binning techniques may not adequately improve pixel response speed and resolution.
Innovation Solution
The implementation of a hybrid imaging sensor with a pixel array comprising both intensity photodiodes and event vision sensor (EVS) photodiodes, along with programmable binning transistors that can switch between different binning modes to enhance event detection by binning either the intensity or EVS photodiodes, thereby improving pixel response speed and detection capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If binning operations are performed on pixel circuits to reduce resolution and power consumption, then power consumption and noise are reduced, but event detection capability and pixel response speed may be degraded
Solution Approach 1:
The pixel array is segmented into multiple types of pixel circuits including intensity photodiodes and EVS photodiodes, allowing different regions to perform different functions. This segmentation enables selective binning of intensity pixels while preserving EVS pixel functionality for event detection, thus reducing overall power consumption without compromising event detection capability.
Solution Approach 2:
The binning configuration is made dynamic and programmable, allowing the system to switch between different binning modes (e.g., 2x2, 4x4) and configurations based on lighting conditions and application requirements. This dynamic adaptability ensures optimal power consumption while maintaining event detection capability when needed.
2Measurement precision
If binning operations are performed to improve low light performance, then low light detection is improved, but pixel response speed may be reduced
Solution Approach 1:
The pixel array is divided into intensity photodiodes optimized for low light binning operations and EVS photodiodes optimized for high-speed event detection. By segmenting the array and selectively binning only intensity pixels, the system achieves improved low light performance without sacrificing the response speed of EVS pixels.
Solution Approach 2:
Different regions of the pixel array are assigned different functional qualities - intensity photodiodes with larger area for low light sensitivity and EVS photodiodes with faster response characteristics. This local differentiation allows simultaneous optimization for both low light detection and response speed in different parts of the array.
3Adaptability or versatility
If hybrid pixel structure with both intensity and EVS photodiodes is implemented, then event detection and imaging capabilities are enhanced, but device complexity increases
Solution Approach 1:
The patent merges intensity photodiodes and EVS photodiodes into a hybrid pixel array with shared readout circuitry and control logic. This combining approach enables both intensity imaging and event detection capabilities within a single device while reducing overall complexity compared to separate devices, as common infrastructure can be shared between the two functional types.
Solution Approach 2:
The pixel array is designed with universal readout circuitry and control mechanisms that can handle both intensity photodiode outputs and EVS photodiode outputs. This multi-functionality allows a single device to perform both traditional imaging and event-based vision tasks, enhancing adaptability without proportionally increasing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances object feature detection and imaging performance in both typical contrast and low light conditions by optimizing binning strategies, leading to improved event detection and pixel response speed.
Implementation Method 1
charge is collected in a photoelectric conversion device of the pixel circuit as a result of impinging light
Data Source
AI summary
Binning in a hybrid pixel structure of image pixels and event vision sensor (EVS) pixels. In one embodiment, the imaging sensor includes a pixel array including a plurality of pixel circuits and a plurality of binning transistors. A first portion of the plurality of pixel circuits individually includes an intensity photodiode. A second portion of the plurality of pixel circuits individually includes an event vision sensor (EVS) photodiode. The plurality of binning transistors is configured to bin together at least one of the first portion or the second portion.