Nitride Semiconductor Gate Recess Structure for Breakdown Control
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Solution Overview
Problem
Existing nitride semiconductor devices face challenges in mitigating local electric field concentration, which can lead to reduced gate breakdown voltage and increased risk of crystal defects.
Innovation Solution
The nitride semiconductor device incorporates a gate layer divided into first and second gate portions with a recess in between, along with an insulator filling the recess and projecting upward to cover parts of the gate portions, thereby scattering electric field concentration and increasing gate breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional gate structure is used, then the device structure is simple, but local electric field concentration occurs leading to reduced gate breakdown voltage
Solution Approach 1:
The gate layer is divided into multiple gate portions (first gate portion and second gate portion) separated by a recess. This segmentation distributes the electric field concentration across multiple regions rather than a single continuous gate, thereby increasing the gate breakdown voltage while maintaining manageable structural complexity.
Solution Approach 2:
An insulator is introduced in the recess between gate portions, creating a vertical dimension element that projects upward to cover parts of the gate portions. This three-dimensional configuration effectively scatters electric field lines and mitigates local concentration, improving gate breakdown voltage without excessive complexity increase.
2Reliability
If the gate layer is divided into multiple portions with a recess, then electric field concentration is mitigated, but the device structure becomes more complex
Solution Approach 1:
The insulator is positioned locally in the recess between gate portions and projects upward to cover only specific areas of the gate portions. This localized approach targets the critical regions where electric field concentration occurs, effectively mitigating the problem while minimizing the overall structural complexity compared to a fully complexed gate structure.
3Manufacturing precision
If a simple gate structure is used, then manufacturing is easier, but on-resistance increases
Solution Approach 1:
Dividing the gate layer into multiple gate portions with a recess between them creates a structure that can be manufactured using standard semiconductor fabrication techniques. The segmented structure allows for better control of the active channel regions, which helps reduce on-resistance while maintaining reasonable manufacturing precision requirements.
Solution Approach 2:
The insulator material and its dimensions in the recess are optimized to achieve the desired balance between manufacturing ease and electrical performance. By adjusting the insulator's height, width, and material properties, the structure achieves reduced on-resistance through improved electric field distribution without requiring excessively complex fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively mitigates electric field concentration, increases the gate breakdown voltage, and reduces on-resistance, while also minimizing current leakage and maintaining the HEMT's ability to smoothly turn on.
Implementation Method 1
scattering electric field concentration and increasing gate breakdown voltage
Data Source
AI summary
A nitride semiconductor device includes an electron transit layer, an electron supply layer, a gate layer, a gate electrode on the gate layer, a source electrode, and a drain electrode. The gate layer includes a first gate portion, a second gate portion, and a recess between the first gate portion and the second gate portion. The gate electrode is arranged over both the first gate portion and the second gate portion. The nitride semiconductor device further includes an insulator located in the recess.