Backside Contact Extension Region for Lower-Resistance BEOL Wiring

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The manufacturing of backside back-end-of-line (BEOL) networks in semiconductor IC devices is challenging due to difficulties in providing adequate electrical isolation between adjacent backside contacts and backside wires, leading to issues such as increased interfacial resistance and alignment complexities.

Innovation Solution

The implementation of backside contacts with extension regions, which provide an increased surface area for backside wires to connect, thereby reducing interfacial resistance and easing alignment complexities, while also allowing for increased backside wire pitch to reduce the propensity of shorting.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If backside contacts are made larger to reduce interfacial resistance, then connection reliability improves, but alignment complexities increase

Engineering Contradiction:
Improveconnection reliabilityVSAvoidalignment precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The contact structure extends in the lateral dimension through extension regions that protrude from the inline region. This dimensional extension increases the effective surface area for wire connection without requiring larger vertical dimensions, thereby reducing interfacial resistance while maintaining alignment feasibility through the structured geometry.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

Different regions of the backside contact have different functions: the inline region provides direct electrical connection beneath the source/drain region, while the extension regions provide additional connection surface area that protrudes laterally. This local differentiation optimizes both connection reliability and alignment characteristics.

Inventive Principle:
Principle #3Local quality

2Reliability

If backside wire pitch is increased to reduce shorting propensity, then reliability improves, but routing density decreases

Engineering Contradiction:
Improveshorting preventionVSAvoidrouting density
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The backside contact structure is segmented into an inline region and laterally protruding extension regions. This segmentation allows wires to connect to the extension regions with greater alignment tolerance, enabling reduced wire pitch while maintaining connection reliability and reducing shorting propensity through the increased effective connection area.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250185368A1Backside contact with extension region
Publication Date: 2025.06.05 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US20250185368A1 patent drawing
  • US20250185368A1 patent drawing
  • US20250185368A1 patent drawing

AI summary

A backside contact includes an extension region and may further include an inline region. The inline region is below a source/drain region may the extension region extends horizontally generally underneath an adjacent source/drain region. The adjacent S/D region may be connected to a frontside back end of line (BEOL) network by a frontside contact. The extension region may provide for relatively increased surface area for a backside wire of a backside BEOL network to connect thereto, which may relatively decrease the interfacial resistance therebetween and which may ease alignment and/or landing complexities of the backside wire against the backside contact. The extension region may further allow for relatively increased backside wire pitch between backside wires of the backside BEOL network, which may reduce the propensity of shorting between the backside wires.