Backside Source/Drain Contact Isolation for Leakage-Resistant ICs
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Solution Overview
Problem
Integrated circuit devices with power delivery networks on the backside face reliability issues due to leakage current, particularly in highly complex and dense structures, necessitating improved operational reliability.
Innovation Solution
The integrated circuit device incorporates an insulating structure with backside source/drain contact structures electrically isolated by an electrical insulating layer, and a semiconductor material layer on the insulating layer, which reduces leakage current by insulating the semiconductor material from the contact structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If backside source/drain contact structures are used to deliver power, then power delivery efficiency is improved, but leakage current increases reducing reliability
Solution Approach 1:
An electrical insulating layer is introduced as an intermediary between the backside source/drain contact structure and the semiconductor material layer. This insulating layer acts as a mediator that allows the contact structure to deliver power while preventing harmful leakage current to the semiconductor material, thus resolving the contradiction between power delivery efficiency and operational reliability
Solution Approach 2:
The device structure is segmented into distinct functional regions: the backside source/drain contact structure for power delivery, the electrical insulating layer for isolation, and the semiconductor material layer for active device operation. This segmentation allows each component to perform its function independently without interfering with others, particularly preventing leakage current while maintaining power delivery efficiency
2Reliability
If electrical insulating layer is added to isolate contact structures, then leakage current is reduced improving reliability, but device complexity increases
Solution Approach 1:
The electrical insulating layer is positioned in the vertical dimension between the backside contact structure and the semiconductor material layer, rather than adding lateral complexity. This dimensional approach isolates the contact structure from the active devices while maintaining a relatively simple overall device footprint and fabrication process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability of the integrated circuit device by minimizing leakage current, thereby improving the overall operational performance.
Implementation Method 1
an electrical insulating layer on a side wall of an end portion of the backside source/drain contact structure... the electrical insulating layer is configured to electrically insulate the semiconductor material layer from the backside source/drain contact structure
Data Source
AI summary
An integrated circuit device includes an insulating structure, a first source/drain region on the insulating structure, a second source/drain region on the insulating structure and spaced apart from the first source/drain region, a gate structure including at least one gate electrode layer, the gate structure being between the first source/drain region and the second source/drain region, a contact plug connected to the gate structure, a first backside source/drain contact structure penetrating the insulating structure and connected to the first source/drain region, an electrical insulating layer on a side wall of an end portion of the first backside source/drain contact structure, the electrical insulating layer contacting the first source/drain region, and a first semiconductor material layer on the electrical insulating layer, where the electrical insulating layer is configured to electrically insulate the first semiconductor material layer from the first backside source/drain contact structure.