Backside Defect Detector for Semiconductor Wafer Flatness

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Solution Overview

Problem

Minute amounts of materials remaining on the backside of semiconductor wafers after etching can distort the wafer's flatness, leading to non-uniform photoresist depths and improperly sized devices in sub-micron applications, necessitating a method to detect and remove unwanted materials before subsequent processing steps.

Innovation Solution

A backside defect detector using an IR light scan to determine the presence of unwanted materials on the backside of semiconductor wafers by comparing detected intensity values to stored values from known good wafers, generating error signals for areas requiring further cleaning, and utilizing IR sources and receivers to scan grid areas of the wafer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If wet etchant is used to remove materials from the backside of the wafer, then the backside should be clean and flat, but minute amounts of materials undesirably remain on the backside causing distortion

Engineering Contradiction:
Improvebackside flatnessVSAvoidcleanliness of backside
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by performing an inspection of the backside of the wafer before subsequent processing steps. The system scans the backside to detect minute amounts of remaining materials that cause distortion, allowing for identification and correction of contamination issues before they affect photolithography and device fabrication.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If photoresist is deposited on the top surface of the wafer, then the photoresist should have uniform depth, but distorted backside causes non-uniform depth and focus spots

Engineering Contradiction:
Improvephotoresist depth uniformityVSAvoidphotolithographic distortion
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The system performs preliminary detection of backside contamination before photoresist deposition. By scanning the backside and identifying areas with minute materials that cause distortion, the system enables pre-processing or corrective actions to ensure the backside is properly prepared, thereby preventing photolithographic distortion and ensuring uniform photoresist depth.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback by using the inspection system to detect backside conditions and providing information about minute materials present on the backside. This feedback mechanism allows process control systems to adjust or reprocess wafers with contamination issues, preventing defective photoresist deposition and ensuring manufacturing precision.

Inventive Principle:
Principle #23Feedback

3Measurement precision

If IR light scan is performed to detect unwanted materials on the backside, then the presence of contaminants can be determined, but additional processing time is required

Engineering Contradiction:
Improvedetection of unwanted materialsVSAvoidprocessing time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces mechanical inspection methods with an optical detection system that uses IR light to scan the backside of the wafer. This substitution enables non-contact, rapid detection of minute materials causing distortion, achieving high measurement precision without the time-consuming manual inspection or physical sampling methods.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Ensures the backside of semiconductor wafers is clean and flat, preventing photolithographic distortion and ensuring uniformity in subsequent processing steps, thereby improving the accuracy of device fabrication.

Implementation Method 1

an IR source 110 and an IR receiver 112 that lie on opposite sides of a plane 114. IR source 110 outputs one or more wavelengths of IR light. IR receiver 112 detects the one or more wavelengths of IR light

Methodology Applied
Scientific EffectInfrared light absorption: Absorption (EM radiation)

Data Source

PatentUS7754502B1Backside defect detector and method that determines whether unwanted materials are present on the backside of a semiconductor wafer
Publication Date: 2010.07.13 NAT SEMICON CORP
  • US7754502B1 patent drawing
  • US7754502B1 patent drawing
  • US7754502B1 patent drawing

AI summary

Minute materials which can be undesirably left on the backside of a semiconductor wafer are detected by scanning the semiconductor wafer with an infra-red (IR) light following the completion of a process step that forms and then selectively removes a material from the top surface of the wafer. Any detected material can then be removed from the backside of the wafer to ensure that that backside of the wafer is clean and flat.