Backside Electrode Gaps for Higher HV Breakdown Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Modern integrated circuits face challenges in achieving high breakdown voltages and electrical field uniformity in high voltage semiconductor devices, particularly in RF devices, due to limitations in transistor design and substrate materials.
Innovation Solution
The implementation of a backside electrode with strategically placed gaps beneath high voltage semiconductor devices, separated by an insulating layer, enhances breakdown voltage and electrical field uniformity by improving the distribution of electrical fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional high voltage transistor device is used, then the device can handle high breakdown voltages, but the electrical field uniformity is poor and leakage current increases
Solution Approach 1:
The backside electrode is segmented into multiple electrodes with gaps between them, positioned directly beneath the drift region. This segmentation creates a more uniform electrical field distribution across the drift region, reducing field concentration and minimizing leakage current while maintaining high breakdown voltage capability
Solution Approach 2:
The electrode structure is designed with different regions having different properties: the backside electrodes are positioned specifically beneath the drift region with gaps between them, creating localized field control. The gaps are strategically placed to optimize field uniformity in the high-voltage stress region while maintaining overall device performance
2Reliability
If the breakdown voltage is increased, then the device can handle higher voltages, but the electrical field uniformity deteriorates
Solution Approach 1:
The backside electrode is divided into multiple segmented electrodes with gaps between them. This segmentation allows the electric field to be more uniformly distributed across the drift region at high voltages, preventing field concentration and maintaining field uniformity even when operating at elevated breakdown voltages
Solution Approach 2:
The electrode structure extends into the vertical dimension beneath the substrate, with the backside electrodes positioned on the opposite side of the substrate from the drift region. This three-dimensional arrangement allows for better field control and uniformity across the high-voltage region
3Reliability
If high voltage devices are implemented, then RF transmission performance is improved, but the device complexity increases
Solution Approach 1:
The backside electrode structure serves multiple functions simultaneously: it provides mechanical support to the substrate, acts as an electrical field control element to improve breakdown voltage and field uniformity, and functions as a heat dissipation path. This multi-functionality reduces overall device complexity while achieving high-voltage RF performance
Solution Approach 2:
The backside of the substrate is utilized as an active element in the high-voltage device structure. By positioning electrodes on the backside, the substrate itself serves dual purposes as both the mechanical platform and an integral part of the electrical field control structure, eliminating the need for additional complex support structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design increases the breakdown voltage and reduces leakage current, while maintaining packing density and reducing latch-up, thereby improving the performance of high voltage semiconductor devices.
Implementation Method 1
An insulating layer separates the electrode from a semiconductor body in which the high voltage semiconductor device is formed
Data Source
AI summary
An integrated circuit (IC) device comprises a high voltage semiconductor device (HVSD) on a frontside of a semiconductor body and further comprises an electrode on a backside of the semiconductor body opposite the frontside. The HVSD may, for example, be a transistor or some other suitable type of semiconductor device. The electrode has one or more gaps directly beneath the HVSD. The one or more gaps enhance the effectiveness of the electrode for improving the breakdown voltage of the HVSD.