FEOL Interconnect Layout for Backside Access Without TSVs
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor device fabrication methods for backside electrical connections are time-consuming and limited in design flexibility, requiring extensive processing and complex operations for forming interconnects, especially in vertical die stack assemblies.
Innovation Solution
The formation of pre-positioned front-end-of-line interconnect structures during FEOL processing, allowing for direct access and routing from the backside during BEOL or post-probe processing, eliminating the need for through-silicon vias and enabling ultra-thin die stacking with increased design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional BEOL processing methods are used to form backside interconnects, then electrical connections can be established, but processing time is excessive and fabrication complexity is high
Solution Approach 1:
The patent applies preliminary action by forming the interconnect structures during FEOL processing before the substrate is flipped for BEOL processing. This advance preparation eliminates the need for subsequent deep hole etching and filling operations, significantly reducing processing time and improving manufacturing efficiency
2Ease of manufacture
If conventional BEOL processing methods are used to form backside interconnects, then electrical connections can be established, but fabrication operations become excessively complex
Solution Approach 1:
The patent applies preliminary action by forming the interconnect structures during FEOL processing before the substrate is flipped for BEOL processing. This advance preparation eliminates the need for subsequent deep hole etching and filling operations, significantly reducing processing time and improving manufacturing efficiency
3Adaptability or versatility
If through-silicon vias are used for backside connections, then electrical connections can be made, but design flexibility for routing configurations is limited
Solution Approach 1:
The patent applies preliminary action by forming the interconnect structures during FEOL processing before the substrate is flipped for BEOL processing. This advance preparation eliminates the need for subsequent deep hole etching and filling operations, significantly reducing processing time and improving manufacturing efficiency
Solution Approach 2:
The patent applies dimensionality change by transitioning from vertical through-silicon via routing to a combination of shallow lateral interconnects and vertical vias. This multi-dimensional approach enables more flexible routing configurations and improves design adaptability while reducing fabrication complexity
Data Source
AI summary
Systems and methods for a semiconductor device having a front-end-of-line interconnect structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor or silicon substrate material and a front side, and a conducting material on the front side of the dielectric material. The conducting material may have a line portion and an interconnect structure electrically coupled to the line portion and separated from the front side of the substrate material by the dielectric material. The interconnect structure has a backside defining a contact surface. The semiconductor device may further include a semiconductor die proximate the front side of the dielectric material, an insulating material encasing at least a portion of the semiconductor die, and an opening through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.