Backside Gate Contact Structure for Lower-Aspect-Ratio Gate Electrodes
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing density, improving electrical reliability, and reducing manufacturing complexity while maintaining wiring pitch and size.
Innovation Solution
The semiconductor device incorporates a design with insulation substrate regions, field insulation layers, and gate electrodes connected by backside gate contacts, featuring extension and protruding parts to enhance connectivity and reduce the aspect ratio of gate contacts, thereby improving reliability and downsizing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional gate contact structures are used, then manufacturing process is simpler, but electrical reliability deteriorates and wiring pitch cannot be increased
Solution Approach 1:
The gate electrode is divided into multiple segments: a first gate electrode portion extending in the first direction over the active pattern, and a second gate electrode portion extending in the second direction to contact the gate contact. This segmentation allows each portion to be optimized for its specific function, improving electrical reliability while managing structural complexity.
Solution Approach 2:
The gate electrode structure transitions from a conventional planar configuration to a three-dimensional configuration with portions extending in different directions (first direction and second direction). This dimensional change enables the gate electrode to simultaneously achieve low resistance contact and proper alignment with the active pattern, improving electrical reliability without increasing overall device footprint.
2Ease of manufacture
If wiring pitch is increased, then device density decreases, but manufacturing complexity reduces
Solution Approach 1:
The gate electrode extends in both the first direction (over the active pattern) and the second direction (to contact the gate contact), utilizing three-dimensional space to achieve proper electrical connection. This dimensional approach allows for increased wiring pitch and simplified manufacturing while maintaining device density through efficient spatial utilization.
3Reliability
If gate contact aspect ratio is reduced, then electrical reliability improves, but device area increases
Solution Approach 1:
The second gate electrode portion extends in the second direction to contact the gate contact, creating a more favorable aspect ratio for the gate contact structure. This dimensional approach reduces the vertical depth requirement while maintaining electrical connectivity, improving reliability without proportionally increasing device area.
Solution Approach 2:
The gate electrode structure is designed asymmetrically with different portions extending in different directions. The first portion extends in the first direction to cover the active pattern, while the second portion extends in the second direction to contact the gate contact. This asymmetric design optimizes the aspect ratio for electrical reliability while minimizing overall device footprint.
Data Source
AI summary
A semiconductor device including a source/drain pattern disposed on a frontside of a substrate in a first region, a gate electrode adjacent to the source/drain pattern in a first direction and extending in a second direction, and a backside gate contact disposed in a field region, and connected to the gate electrode from a backside of the substrate, wherein the gate electrode includes a filling conductive film, and an electrode layer surrounding the filling conductive film, the filling conductive film includes an extension part extending in the second direction across the first and the second regions on the frontside of the substrate and a protruding part connected to the backside gate contact, the electrode layer disposed on the extension part, a sidewall of the protruding part is exposed by the electrode layer, and the field region has a field insulation layer surrounding the side wall of the protruding part.