Backside Gate Contact Layout for Lower-Capacitance Semiconductor Routing
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Solution Overview
Problem
As semiconductor device size shrinks, the complexity of metal layer routing in intermetal connection layers increases, necessitating a solution to reduce capacitance and improve performance speed.
Innovation Solution
The formation of backside gate contacts and source/drain contacts on the substrate, along with self-aligned backside metal layer connections, reduces routing density and capacitance, enabling efficient local interconnection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given chip area, but metal layer routing complexity increases
Solution Approach 1:
The patent introduces backside gate contacts that extend through the substrate thickness dimension, allowing gate signals to be routed from the backside of the device. This adds a vertical routing dimension that reduces the burden on lateral metal layer routing, thereby decreasing routing complexity while maintaining high integration density
2Device complexity
If metal layer routing complexity increases, then more connections are needed, but capacitance increases and performance speed decreases
Solution Approach 1:
The patent extracts the gate contact function from the traditional front-side metal routing layers and relocates it to the backside of the device. By taking out the gate signal path from the complex lateral routing network and providing a direct vertical path through the substrate, the number of metal layer connections is reduced, thereby decreasing total capacitance and improving performance speed
Data Source
AI summary
Embodiments of the present disclosure provide a method for forming backside gate contacts and semiconductor fabricated thereof. A semiconductor device includes both signal outputs, such as source/drain contacts, and signal inputs, such as gate contacts, formed on a backside of the substrate. The backside gate contacts and backside source/drain contacts are formed in a self-aligned manner.