Backside MRAM Integration to Ease Frontside Routing Limits
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Solution Overview
Problem
Existing MRAM integration schemes in semiconductor devices are not satisfactory due to space constraints and routing issues in the frontside interconnect structure, which limits device performance and efficiency.
Innovation Solution
Integrating MRAM cells in the backside interconnect structure, where the top electrode is coupled to the drain feature via a backside drain contact, reducing device dimensions and freeing up space in the frontside interconnect structure for additional features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If MRAM cells are integrated in the frontside interconnect structure, then device functionality is achieved, but device area increases and routing complexity increases
Solution Approach 1:
The patent moves MRAM cell integration from the traditional frontside interconnect structure to the backside interconnect structure, utilizing the third dimension (vertical stacking) to resolve the area conflict. This allows the frontside to be dedicated to logic circuits while the backside accommodates memory cells, effectively doubling the usable integration space without increasing the chip footprint.
Solution Approach 2:
The patent divides the interconnect structure into separate frontside and backside components, each optimized for specific functions. The frontside interconnect structure handles logic circuit routing while the backside interconnect structure handles memory cell routing, reducing overall routing complexity and improving signal integrity for each respective function.
2Adaptability or versatility
If MRAM cells are integrated in the frontside interconnect structure, then device functionality is achieved, but routing complexity increases
Solution Approach 1:
The patent segments the interconnect routing into frontside and backside pathways. Word lines are routed through the frontside interconnect structure to logic circuits, while bit lines and storage element connections are routed through the backside interconnect structure. This segmentation separates conflicting routing paths and reduces overall routing complexity.
Solution Approach 2:
By utilizing the backside of the substrate as an additional routing dimension, the patent creates separate routing planes for different signal types. This vertical separation reduces the number of vias and interconnect layers required, simplifying the overall routing architecture while maintaining full device functionality.
3Area of stationary object
If device area is reduced by 10-25%, then space efficiency improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent achieves area reduction by utilizing the backside of the substrate for MRAM cell integration, effectively using the third dimension (vertical space) to accommodate additional functionality without increasing the chip footprint. This approach reduces the required device area by 10-25% while maintaining standard manufacturing tolerances through proven backside processing techniques.
Data Source
AI summary
Semiconductor structures and methods of the forming the same are provided. A semiconductor structure includes a source feature and a drain feature, an active region between the source feature and the drain feature, a gate structure over the active region, a frontside interconnect structure disposed over the source feature, the drain feature, and the gate structure, a backside interconnect structure disposed below the source feature, the drain feature, and the gate structure, and a storage element disposed in the backside interconnect structure.