Backside Power Routing in Semiconductor Contact Structures
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Solution Overview
Problem
The increasing complexity and scaling down of semiconductor integrated circuits (ICs) have made it challenging to improve processing and manufacturing efficiency while reducing costs.
Innovation Solution
The semiconductor device structure involves moving the power network from the front-side to the backside, which relaxes the routing resources for both backside power and front-side signal, allowing for more efficient manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the power network is kept on the front-side with increasing circuit density, then functional density increases, but routing resource constraints worsen and manufacturing complexity increases
Solution Approach 1:
The patent applies dimensionality change by moving the power network from the traditional front-side (2D plane) to the backside of the semiconductor device, utilizing the third dimension (depth/vertical space) to resolve routing congestion. This allows power and signal routing to occur in separate spatial planes, effectively increasing functional density without worsening routing resource constraints on the front-side.
2Productivity
If geometry size is scaled down to increase functional density, then production efficiency improves, but processing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor device into distinct functional zones: front-side for signal processing circuits and backside for power network. This spatial segmentation allows independent optimization of each region, enabling continued scaling down for higher productivity while managing processing complexity through specialized fabrication sequences for each zone.
3Power
If more routing resources are allocated to power network, then power delivery capability improves, but signal routing flexibility deteriorates
Solution Approach 1:
The patent resolves this contradiction by utilizing the vertical dimension to separate power routing (backside) from signal routing (front-side). This allows robust power delivery capability through dedicated backside routing without compromising signal routing flexibility on the front-side, as the two routing systems operate in independent spatial planes.
Data Source
AI summary
Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region, a second source/drain region disposed adjacent the first source/drain region along a first direction, a third source drain region, a fourth source/drain region disposed adjacent the third source/drain region along the first direction, a first dielectric layer having a first end and a second end opposite the first end, a conductive contact disposed between the first and third source/drain regions and between the second and fourth source/drain regions, and the conductive contact is disposed in the first dielectric layer. The structure further includes a conductive feature disposed in the first dielectric layer, and the conductive feature is electrically connected to the conductive contact.