Backside Power Mesh Layout for Low-Resistance Semiconductor Routing

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Solution Overview

Problem

As semiconductor devices miniaturize, the complexity of manufacturing increases, leading to issues such as high yield loss, reduced reliability of electrical interconnections, and low testing coverage, necessitating improvements in device robustness and manufacturing efficiency.

Innovation Solution

A backside power rail scheme is introduced, where the front-side area is used for signal lines and the backside area for power rails, enlarging the routing area for power rails to reduce resistance and capacitance, thereby maintaining or improving device performance despite reduced device size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If power rails are routed only on the front side of the substrate, then the routing area is limited, but the device performance deteriorates due to increased resistance and capacitance

Engineering Contradiction:
Improverouting areaVSAvoiddevice performance
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent applies dimensionality change by routing power rails on both the front side and back side of the substrate, utilizing the third dimension (depth/thickness) to create additional routing space. This allows the power distribution network to expand from a single-plane configuration to a multi-layer spatial arrangement, effectively increasing the total routing area while reducing resistance and capacitance through shorter and more direct power delivery paths.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If device size is reduced to increase functional density, then more devices fit per chip area, but resistance and capacitance of power rails increase

Engineering Contradiction:
Improvefunctional densityVSAvoidpower transmission quality
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

By implementing backside power rail routing, the patent creates additional spatial dimensions for power distribution. This enables the power network to serve densely packed devices more effectively by providing multiple routing paths and reducing the length of individual power rails, thereby maintaining acceptable resistance and capacitance levels even as device density increases.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent segments the power distribution network into front-side and back-side components. This segmentation allows independent optimization of each layer's routing paths, enabling shorter and more efficient power delivery to densely packed devices while distributing the electrical load across multiple separated conductors on both substrate faces.

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If conventional front-side power rail routing is used, then the manufacturing process is simpler, but yield loss increases and reliability decreases

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidelectrical interconnection reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent extends the power rail routing into the vertical dimension by utilizing the substrate back side. This dimensional expansion provides additional routing flexibility that improves electrical interconnection reliability and reduces yield loss, while the manufacturing process remains relatively straightforward by adapting existing front-side routing techniques to the back side of the substrate.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20240055433A1Semiconductor structure with backside power mesh and method of forming the same
Publication Date: 2024.02.15 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240055433A1 patent drawing
  • US20240055433A1 patent drawing
  • US20240055433A1 patent drawing

AI summary

A method includes forming a doped region extending in a first direction on a substrate; depositing a gate electrode over the substrate and extending in a second direction; and forming a source/drain region on one side of the doped region; forming a first power rail over an upper surface of the source/drain region, the first power rail extending in the first direction and electrically coupled to the source/drain region; and depositing a second power rail below a lower surface of the source/drain region, the second power rail extending in the first direction and electrically coupled to the source/drain region. The first power rail overlap the second power rail from a top-view perspective.