Backside Image Sensor Isolation With H-Shaped Etch Stop Layers

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Solution Overview

Problem

The challenge of forming reliable image sensor devices at smaller sizes is exacerbated by the difficulty in fabricating complex circuits with decreasing feature sizes, which complicates the processing and manufacturing of image sensor devices.

Innovation Solution

A method involving the formation of isolation structures and light-blocking structures in a semiconductor substrate to separate and electrically isolate light-sensing regions, using etch stop layers, insulating layers, and light-blocking materials to reduce optical and electrical crosstalk, and incorporating reflective grids and anti-reflection coatings to enhance light sensing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If feature sizes are reduced to increase functional density, then the number of interconnected devices per chip area increases, but fabrication processes become more difficult and manufacturing reliability decreases

Engineering Contradiction:
Improvefunctional densityVSAvoidfabrication reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent divides the semiconductor substrate into multiple isolated regions using isolation structures (trenches filled with dielectric material) and light-blocking structures. This segmentation allows each pixel region to be independently formed and processed, enabling higher functional density while maintaining fabrication reliability through modular processing approaches.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements different structural characteristics in different regions of the substrate. Etch stop layers are selectively positioned at specific depths in certain regions, and isolation structures are tailored to local requirements. This local customization allows optimization for high-density integration while maintaining manufacturability in each specific area.

Inventive Principle:
Principle #3Local quality

2Reliability

If isolation structures are formed to separate light-sensing regions, then optical and electrical crosstalk is reduced, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvesignal isolationVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines multiple functions into integrated structures. The etch stop layers serve both as process control elements during fabrication and as part of the final isolation architecture. Light-blocking structures are integrated with the isolation trenches, eliminating the need for separate processing steps and reducing overall device complexity while maintaining effective signal isolation.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The isolation structures perform multiple functions simultaneously: they provide electrical isolation between adjacent pixels, optical isolation through light-blocking materials, mechanical support, and process alignment references. This multi-functionality reduces the need for additional dedicated structures, thereby reducing overall device complexity while achieving reliable signal isolation.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Manufacturing precision

If multiple processing steps are used to form isolation and light-blocking structures, then manufacturing precision is improved, but productivity and manufacturing efficiency decrease

Engineering Contradiction:
Improvestructural precisionVSAvoidmanufacturing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent performs preliminary formation of etch stop layers at specific depths before subsequent processing steps. These pre-formed layers serve as templates and alignment references for later isolation structure formation, ensuring high manufacturing precision while reducing the number of iterative adjustment steps needed, thereby improving overall manufacturing efficiency.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The etch stop layers act as intermediary structures that facilitate the transition between different processing stages. They provide a stable reference framework that enables precise formation of isolation structures without requiring complex real-time control, thus maintaining manufacturing precision while simplifying the overall process flow and improving productivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed method improves the reliability and efficiency of image sensor devices by reducing optical and electrical crosstalk, enhancing light sensing capabilities, and improving manufacturing yield.

Implementation Method 1

The light-blocking structure is between each two adjacent light-sensing regions. The light-blocking structure blocks light to prevent the light from traveling between the adjacent light-sensing regions.

Methodology Applied
Scientific EffectLight blocking: Absorption (EM radiation)

Implementation Method 2

incorporating reflective grids and anti-reflection coatings to enhance light sensing

Methodology Applied
Scientific EffectLight reflection: Reflection

Data Source

PatentUS12356749B2Image sensor device
Publication Date: 2025.07.08 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12356749B2 patent drawing
  • US12356749B2 patent drawing
  • US12356749B2 patent drawing

AI summary

An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, the first isolation structure has an etch stop layer, the etch stop layer has an end portion, and the end portion has an H-like shape. The image sensor device includes a second isolation structure extending into the substrate from the back surface to the end portion. The second isolation structure surrounds a second portion of the light-sensing region.