Backside Power Staple Structure for Compact IC Power Delivery
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Solution Overview
Problem
The scaling of multi-gate transistors in integrated circuits faces challenges due to variability in conventional fabrication processes, limiting further miniaturization beyond the 10 nanometer node, and requires new methodologies to optimize performance and area efficiency.
Innovation Solution
The implementation of a backside power staple architecture, which delivers power from the wafer substrate to the front-side metal routing layer through periodic feedthrough vias, reducing the need for wide power wires on the front side and allowing for a more compact integrated circuit structure with lower power network resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication processes are used for scaling multi-gate transistors, then manufacturing compatibility and cost are maintained, but manufacturing precision and reliability deteriorate at 10 nanometer node and below
Solution Approach 1:
The power delivery network is segmented into backside power rails and front-side power distribution, with periodic feedthrough vias connecting the two. This segmentation allows independent optimization of power delivery on the backside while maintaining compatibility with existing front-side fabrication processes, resolving the contradiction between manufacturing precision and ease of manufacture
Solution Approach 2:
The patent introduces power delivery in the vertical dimension by routing power rails on the backside of the substrate and using deep vias to connect to front-side metal layers. This dimensional transition enables precise power delivery control without compromising front-side fabrication processes, addressing the precision-complexity contradiction
2Power
If wide power wires are used on the front side to deliver power, then power delivery capability is improved, but cell height and area increase
Solution Approach 1:
Instead of delivering power from front to back through wide wires, the patent inverts the approach by establishing power rails on the backside and delivering power through periodic feedthrough vias. This inversion eliminates the need for wide front-side power wires, reducing cell height while maintaining power delivery capability
Solution Approach 2:
The backside power rails connect to front-side metal layers through periodic feedthrough vias rather than continuous wide wires. This periodic connection approach delivers power efficiently while minimizing the vertical space required, directly addressing the contradiction between power delivery and cell height
3Reliability
If continuous boundary deep via structure is used, then power delivery is achieved, but fabrication complexity and process difficulty increase
Solution Approach 1:
The continuous boundary deep via structure is segmented into periodic feedthrough vias that connect backside power rails to front-side metal layers. This segmentation maintains power network reliability through distributed connections while significantly reducing fabrication complexity by eliminating the need for continuous via formation
Solution Approach 2:
The patent uses standard periodic via formation processes instead of complex continuous via structures. These periodic feedthrough vias are simpler to manufacture using existing fabrication techniques, reducing device complexity while maintaining adequate power delivery reliability
Data Source
AI summary
Integrated circuit structures having backside power staple are described. In an example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts is extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A front-side metal routing layer is extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts. A backside metal routing layer is extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer. A conductive feedthrough structure couples the backside metal routing layer to the front-side metal routing layer.


