Backside Interconnect Thermal Paths for Dense Semiconductor Chips
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Solution Overview
Problem
As technology nodes shrink in semiconductor devices, the increased transistor density leads to elevated operating temperatures due to reduced chip area for thermal dissipation, necessitating improved heat dissipation mechanisms.
Innovation Solution
Incorporation of thermal conductive paths from heat-generating components to the exterior of the chip through dummy features in the interconnect structure on the backside and/or front-side of the semiconductor chip, enhancing heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor density is increased to improve integration density, then productivity is improved, but temperature increases due to reduced thermal dissipation area
Solution Approach 1:
The patent introduces thermal dissipation paths that extend in the vertical dimension through multiple interconnect layers, rather than relying solely on horizontal chip area. Dummy conductive features are stacked across multiple layers to create three-dimensional thermal conduction pathways from heat-generating regions to heat sink locations, effectively utilizing the Z-dimension for thermal management.
Solution Approach 2:
The patent employs dummy conductive features as intermediary thermal conduction elements between heat-generating active devices and heat sink regions. These dummy features act as thermal mediators, providing dedicated thermal pathways that do not interfere with electrical functionality while efficiently conducting heat away from critical regions through the interconnect structure.
2Productivity
If chip area is reduced to improve integration density, then productivity is improved, but thermal dissipation capability deteriorates
Solution Approach 1:
The patent compensates for reduced horizontal thermal dissipation area by creating vertical thermal conduction pathways through multiple interconnect layers. Dummy conductive features are distributed across several layers to build three-dimensional thermal highways that conduct heat from source regions to heat sinks, effectively utilizing the vertical dimension to maintain thermal dissipation capability despite reduced chip area.
Solution Approach 2:
The dummy conductive features serve multiple functions: they provide thermal conduction pathways while occupying space that would otherwise be unavailable for electrical interconnects. The same structural elements that fill spacing gaps in the interconnect architecture also function as thermal management components, enabling dual-purpose utilization of the interconnect structure.
3Temperature
If thermal conductive paths are added to improve heat dissipation, then temperature is controlled, but device complexity increases
Solution Approach 1:
The patent integrates thermal management functionality into the existing interconnect structure by using dummy conductive features that simultaneously serve as both electrical interconnect elements and thermal conduction pathways. This multi-functional approach allows thermal management to be achieved without adding separate dedicated thermal structures, thereby minimizing the increase in overall device complexity.
Solution Approach 2:
The patent merges the electrical interconnect function and thermal conduction function into a single integrated structure. The dummy conductive features are combined with the active interconnect elements, creating a unified architecture where the same material layers and structural elements perform both electrical and thermal roles, reducing the need for additional separate thermal management components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively manages operating temperature increases by providing efficient thermal conductive paths, improving the thermal management of semiconductor devices.
Implementation Method 1
Incorporation of thermal conductive paths from heat-generating components to the exterior of the chip through dummy features in the interconnect structure
Data Source
AI summary
A device includes a device layer comprising a first transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure includes a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a conductive line electrically connected to the source/drain region of the first transistor through the contact; and a thermal dissipation path thermally connected to the device layer, the thermal dissipation path extending to a surface of the second interconnect structure opposite the device layer. The thermal dissipation path comprises a dummy via.