Backside Thermal Vias for 3D IC Hotspot Dissipation
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Solution Overview
Problem
The challenge of heat dissipation in three-dimensional integrated circuit (3D IC) packages is exacerbated by high heat density and poor thermal dissipation, leading to thermal hotspots that affect electrical performance and reliability.
Innovation Solution
Implementing through-substrate thermal conductive vias (TSVs) from the backside of IC dies, coupled with a heat dissipation layer, to efficiently transfer heat generated by thermal hotspot regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional IC packaging is used to increase chip density, then functional density and integration are improved, but heat dissipation performance deteriorates and thermal hotspots are generated
Solution Approach 1:
The patent introduces thermal management in the vertical dimension by forming through-substrate thermal vias that extend from the front surface through the substrate to the back surface. This three-dimensional thermal conduction path allows heat to be dissipated vertically through the substrate thickness, complementing traditional planar heat dissipation methods and effectively managing heat in high-density 3D IC packages.
Solution Approach 2:
The patent uses thermal conduction filler material as an intermediary substance within the through-substrate vias to facilitate heat transfer. This filler material, with thermal conductivity of at least 1 W/m·K, acts as a thermal bridge between the heat-generating devices and the substrate surfaces, enabling efficient heat dissipation without directly modifying the device structures.
2Quantity of substance
If chip density is increased in 3D structures, then functional integration is improved, but thermal hotspot formation worsens due to trapped heat in inner regions
Solution Approach 1:
The patent segments the substrate into multiple regions by forming an array of through-substrate thermal vias distributed across the substrate surface. This segmentation creates multiple independent thermal conduction channels, allowing heat from different device regions to be dissipated through separate via pathways, thereby preventing concentrated thermal hotspots in high-density 3D structures.
Solution Approach 2:
The patent applies local quality enhancement by concentrating thermal conduction capabilities at specific locations where thermal hotspots are generated. The through-substrate vias are strategically positioned and configured with appropriate dimensions and filler materials to provide localized high thermal conductivity paths, addressing thermal management needs at critical hotspots rather than uniformly across the entire substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances device performance, reliability, and lifespan by quickly dissipating heat from thermal hotspots through the TSVs to a heat dissipation layer.
Implementation Method 1
through-substrate thermal conductive vias (TSVs) from the backside of IC dies, coupled with a heat dissipation layer, to efficiently transfer heat generated by thermal hotspot regions
Data Source
AI summary
A semiconductor device includes a device layer including transistors, a frontside multilayer interconnect structure disposed on a frontside of the device layer, a semiconductor layer disposed on the frontside multilayer interconnect structure, a backside multilayer interconnect structure disposed under a backside of the device layer, first through vias extending through the device layer and the frontside multilayer interconnect structure and covered by the semiconductor layer, and second through vias extending through the device layer, the frontside multilayer interconnect structure, and the semiconductor layer.