Basic Aqueous Solution for Silicon Film Removal
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Solution Overview
Problem
In semiconductor manufacturing, existing pattern-forming methods face challenges in removing silicon-containing films without causing damage to the substrate, particularly when using acidic or fluorine-based removal methods, which can lead to defects and hinder further miniaturization.
Innovation Solution
A pattern-forming method that involves forming a resist underlayer film, a silicon-containing film, and then using a basic aqueous solution to remove the silicon-containing film without prior treatment with acidic or fluorine compounds, allowing for refabrication and minimizing substrate damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If acidic removing liquid or fluorine compound is used to remove silicon-containing film, then removal efficiency is improved, but substrate damage occurs
Solution Approach 1:
The patent changes the chemical parameter of the removing liquid from acidic/fluorine-based to basic (ammonium hydroxide-based), which fundamentally alters the removal mechanism to achieve both efficient silicon-containing film removal and substrate protection
Solution Approach 2:
The patent converts the previously harmful basic environment (which could damage resist patterns) into a beneficial removing liquid that selectively removes silicon-containing films while protecting the substrate, especially when combined with the hard mask layer
2Manufacturing precision
If refabrication is performed to remove defects, then manufacturing precision is improved, but production time increases
Solution Approach 1:
The patent applies a hard mask layer (silicon oxide film) before forming the silicon-containing film, which serves as a protective preliminary structure that enables easy removal of defective silicon-containing films without damaging underlying layers, facilitating quick refabrication
Solution Approach 2:
The patent segments the mask structure into two functional layers: a hard mask layer for protection and structural integrity, and a silicon-containing film for pattern formation. This segmentation allows selective removal of the silicon-containing film for refabrication while preserving the hard mask layer
3Manufacturing precision
If multilayer resist process is used to reduce pattern size, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The hard mask layer (silicon oxide film) serves multiple functions: it acts as an etching stop layer, a protective layer during silicon-containing film formation, and a base layer for pattern transfer, thereby reducing the need for additional dedicated layers and simplifying the overall process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the removal of silicon-containing films without using acidic or fluorine compounds, facilitating the reformation of films and enabling further miniaturization in semiconductor device manufacturing by preventing substrate damage.
Implementation Method 1
removing the silicon-containing film with a basic aqueous solution
Implementation Method 2
etching the silicon-containing film using the resist pattern as a mask
Data Source
AI summary
A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group.SiX4 (1)