BAW Filter Resonator Stack for High-Frequency Power Handling

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Solution Overview

Problem

Existing bulk acoustic wave (BAW) resonators face challenges in achieving high resonant frequencies and handling high power signals, particularly in applications requiring higher frequencies and power handling capabilities.

Innovation Solution

The use of stacked piezoelectric layers with opposite c-axis orientations between electrodes to excite overtone modes, combined with integrated passive devices, enhances resonant frequencies up to 5-20 GHz and improves power handling, suitable for 5G NR applications.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional BAW resonators are used, then basic filtering function is achieved, but resonant frequency is limited and power handling capability is insufficient

Engineering Contradiction:
Improveresonant frequencyVSAvoidpower handling capability
Core Design Contradiction:
SpeedVSPower

Solution Approach 1:

The resonator is divided into multiple discrete piezoelectric layers (first piezoelectric layer, second piezoelectric layer, third piezoelectric layer) with different c-axis orientations. This segmentation allows each layer to contribute differently to the overall acoustic wave generation, enabling independent optimization of frequency response and power handling characteristics.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the resonator structure are assigned different properties: the first piezoelectric layer has c-axis perpendicular to the substrate (optimized for fundamental mode), while the second and third layers have c-axis at 45 degrees (optimized for overtone mode). This local quality differentiation enables the resonator to achieve both high resonant frequency and improved power handling capability simultaneously.

Inventive Principle:
Principle #3Local quality

2Speed

If overtone mode is excited to achieve higher resonant frequencies, then frequency is improved, but device complexity increases

Engineering Contradiction:
Improveresonant frequencyVSAvoidresonator structure complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

Multiple piezoelectric layers with different c-axis orientations are merged into a single integrated resonator structure. This combining approach allows the resonator to excite both fundamental mode and overtone mode simultaneously, achieving high resonant frequencies while maintaining a unified device structure rather than requiring separate resonators for different modes.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The resonator employs a composite structure made of multiple piezoelectric materials with different crystallographic orientations. This composite approach enables the device to exhibit multiple resonant modes (fundamental and overtone) with a single structure, achieving frequency multiplication without proportionally increasing device complexity.

Inventive Principle:
Principle #40Composite materials

3Device complexity

If fundamental mode is used, then simpler structure is achieved, but resonant frequency is limited to lower values

Engineering Contradiction:
Improveresonator structure complexityVSAvoidresonant frequency
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The resonator is designed to dynamically operate in multiple modes (fundamental mode and overtone mode) depending on the excitation frequency. The stacked piezoelectric layers with different c-axis orientations enable the structure to transition between modes, allowing the same physical structure to achieve both low-frequency and high-frequency operation without requiring separate resonators.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves higher resonant frequencies and improved power handling, meeting stringent 5G NR system level linearity specifications and enabling effective filtering of high-frequency signals.

Implementation Method 1

In BAW resonators, acoustic waves propagate in a bulk of a piezoelectric layer

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

A plurality of acoustic wave filters can be arranged as a multiplexer. For example, two acoustic wave filters can be arranged as a duplexer. Achieving a relatively high resonant frequency for an acoustic wave resonator is desirable for certain applications

Methodology Applied
Scientific EffectResonance: Resonance

Data Source

PatentUS20250323625A1Acoustic wave filter with overtone mode resonator and fundamental mode resonator
Publication Date: 2025.10.16 SKYWORKS GLOBAL PTE LTD
  • US20250323625A1 patent drawing
  • US20250323625A1 patent drawing
  • US20250323625A1 patent drawing

AI summary

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.