Charged Particle Beam Writing Apparatus Dimension Error Correction
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Solution Overview
Problem
Conventional methods for correcting dimension errors in charged particle beam writing, such as electron beam lithography, face challenges in achieving precise line width uniformity due to the loading effect, especially as patterns miniaturize, leading to residual errors that cannot be neglected.
Innovation Solution
A charged particle beam writing apparatus and method that calculates and corrects dimension errors by iteratively calculating area densities and dimension errors using multiple units, including area density calculation, dimension error calculation, and judgment units, to ensure the difference between original and corrected dimensions falls within a predetermined range, thereby achieving high precision resizing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional single-pass loading effect correction is used, then the correction process is simple and fast, but residual dimension errors remain that cannot be neglected, especially for miniaturized patterns
Solution Approach 1:
The correction process is segmented into multiple passes: first correction using initial area density, second correction using recalculated area density after resizing. Each pass handles a portion of the total correction needed, with the first pass addressing major errors and the second pass eliminating residual errors, thereby achieving high precision without excessive overall complexity
Solution Approach 2:
The first correction pass performs preliminary resizing based on initial area density calculations before the final writing process. This preliminary action prepares the pattern data by removing the bulk of dimension errors, enabling the second pass to focus on finer adjustments and achieve the required precision for miniaturized patterns
2Adaptability or versatility
If pattern line width is narrowed to achieve miniaturization, then device integration increases, but loading effect becomes more significant causing greater dimension errors
Solution Approach 1:
The system uses feedback by recalculating area density after the first resizing operation. The second correction pass uses this updated area density information to accurately compensate for loading effects in miniaturized patterns, ensuring line width uniformity is maintained even as device integration increases and patterns become more densely packed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for highly precise correction of dimension errors, ensuring that the resized pattern dimensions align closely with the desired design dimensions, even after accounting for the loading effect, thereby improving the accuracy of pattern writing in miniaturized semiconductor devices.
Implementation Method 1
a writing unit configured to write the pattern of the second dimension in which the difference is within the predetermined range, onto a target workpiece by using a charged particle beam
Implementation Method 2
a loading effect generated when developing a resist film, a loading effect generated when etching chromium (Cr) serving as a shading film under a resist film, and a loading effect generated when a pattern dimension change is produced by chemical mechanical polishing (CMP)
Data Source
AI summary
A charged particle beam writing apparatus which the apparatus includes a first area density calculation unit and a first dimension error calculation unit. The apparatus includes a first dimension calculation unit which calculates a second dimension of a pattern obtained by correcting the first dimension error of the first dimension, a second area density calculation unit which calculates a second area density occupied by the pattern of the second dimension in the predetermined region, a second dimension error calculation unit which calculates a second dimension error caused by the loading effect, a second dimension calculation unit which calculates a third dimension by adding the second dimension error to the second dimension, a judgment unit which judges whether a difference between the first dimension and the third dimension is within a predetermined range, and a writing unit which writes the pattern of the second dimension onto a target workpiece.