Electric Discharge Tubes TRIZ Cases

A stacked connector merges USB and eSATA ports into one housing to enable high-speed data transmission.

Dual ion generating units irradiate upper and lower substrate portions simultaneously, reducing tact time by over 50% compared to sequential processing.

A ceramic-coated high-frequency electrode protects plasma processing components from reactive gas corrosion and heavy-metal contamination.

A remote plasma etch method uses fluorine and oxygen precursors to selectively remove silicon-and-nitrogen-containing material from patterned structures.

Backside contact layer lowers resistivity to secure high-resistivity wafers on electrostatic chucks, preventing de-chucking during processing.

A continuous melting apparatus uses pressure differences to transfer liquid material between treatment chambers.

A ceramic showerhead assembly integrates an embedded RF electrode to drive capacitively coupled plasma while maintaining gas diffusion.

A potassium sodium niobate sputtering target with controlled dopant variation coefficient improves deposition stability.

A sputtering target uses microcracks to divide the brittle plate into fragments that reduce mechanical tensile stress during operation.

Plasma deposition creates diamond-like carbon films on inner tube walls using end-mounted electrodes.

A movable integrating sphere collects light from specific film locations, resolving uneven optical characteristic variations without complex fixed structures.

An intermediary washer seals the gap between a battery connector and circuit board, blocking moisture ingress that causes short circuits.

A cylindrical member with stacked conductive and insulating layers inside a lens tube establishes a high reference voltage for electron beam inspection.

A dual-port electrical connector integrates separate cavities for standard USB 2.0 plugs and high-speed signal transmission within a single housing.

Focused ion beam processing removes surface scars from a truncated cone cathode to enable uniform electron emission.

Multi-pass dimension error calculation compensates for loading effects to ensure line width uniformity in miniaturized semiconductor patterns.

A plasma generation apparatus uses a toroidal ferromagnetic core to induce high-density plasma via electromagnetic coupling.

Glancing angle ion beam polishes sample edges to create flat facets, preventing leading edge damage from ion scattering and implantation.

A quick release buckle integrates a printed circuit board to complete an electrical circuit when mated.

A porous coating on the pin hole suppresses plasma arcing while allowing heat transfer gas to adjust substrate temperature.

A cable-mounted receptacle connector integrates dual terminal sets within a protective shell to support high-speed data transmission.

A controlled-power RJ45 socket uses a switch to disconnect power before physical contact separation.

A specimen holder film withstands pressure differences to enable electron beam irradiation.

Ion beam removes deposition from electrostatic chuck work surface, avoiding vacuum break and calibration delays during cleaning.

Segmented holder with radial indentations centers a sputtering target during thermal expansion, preventing short circuits and mechanical stress.

Translucent waveguide channels LED light to reveal USB connector position in dark car dashboards.

Segmented chambers isolate magnetic layers during PECVD film formation, suppressing composition changes and preserving perpendicular magnetic anisotropy.

Increasing the lateral distance between the focus ring upper tier and workpiece prevents material accumulation that disrupts cooling circulation.

An integrally formed metal frame reinforces the insulative housing of a card edge connector, supporting heavier expansion cards while providing EMI shielding.

Lanthanoid edge ring converts vacuum ultraviolet radiation into visible light for external detection.

Piezoelectric actuators dynamically reposition the edge coupling ring to restore etching uniformity lost to plasma erosion.

An electrical connector uses upper and lower insulative bases assembled vertically to reduce the required mounting area on printed circuit boards.

Stepwise curvature changes in the shield distribute stress to prevent film peel-off while maintaining compact size.

A rotating target with tapered holes and a Faraday cage measures charged particle beam current density, replacing imprecise visual adjustments.

Multi-stage forging and cross-rolling processing refine gold or platinum target crystal grains to a uniform 5 to 50 μm size.

Counterweights balance centrifugal forces to reduce vibration during high-speed rotation, improving uniform processing.

Reactor components react with etch gases to form volatile compounds that purge easily, reducing substrate contamination during semiconductor manufacturing.

A distributed multi-zone plasma source uses a ring chamber and ferrites to generate plasma via induced secondary currents.

Alternating plasma passivation and reactive ion etching steps with controlled ion energy settings to manage trench formation.

Laser annealing in nitrogen atmosphere completes nitridation of reactive sputtered metal nitride, reducing resistivity and residual carbon.

Independent shield rotation prevents cross-contamination and unwanted deposition during sequential material processing.