Charged Particle Beam Writing Apparatus Dose Map Synthesis
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current charged particle beam writing techniques face challenges in achieving uniformity in line width due to the proximity effect and loading effect, requiring complex data sets and corrections that are difficult to combine and apply effectively, leading to inadequate dimensional corrections during electron beam writing for semiconductor devices.
Innovation Solution
A charged particle beam writing apparatus and method that includes a storage unit for inputting and storing set data, dose calculating units, dimension map creation, and correction units to calculate and combine proximity effect correction coefficients and base doses, allowing for precise dimensional corrections by creating and using dose maps to write patterns with improved uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple set data including proximity effect correction coefficient maps and base dose maps are used to correct dimensional fluctuations, then manufacturing precision is improved, but device complexity increases due to difficulty in combining and applying multiple data sets
Solution Approach 1:
The patent combines multiple set data (proximity effect correction coefficient maps and base dose maps) into a single integrated dose map through systematic addition and synthesis operations. This merging process consolidates multiple correction layers into one unified data structure that can be directly applied during electron beam writing, resolving the complexity of managing separate data sets while maintaining comprehensive dimensional correction.
Solution Approach 2:
The integrated dose map serves multiple functions simultaneously: it corrects proximity effects, compensates for loading effects, and provides a unified correction framework for various pattern densities. This multi-functional approach eliminates the need for separate correction procedures for different effect types, simplifying the overall correction system while improving manufacturing precision across diverse patterning scenarios.
2Manufacturing precision
If complex data sets with multiple correction parameters are applied, then manufacturing precision is improved, but ease of operation deteriorates due to difficulty in applying corrections
Solution Approach 1:
The patent performs preliminary synthesis of multiple correction parameters into a pre-calculated integrated dose map before the actual writing process. This advance preparation consolidates all necessary correction data into a ready-to-apply format, eliminating the need for complex real-time calculations during writing operations and significantly improving ease of operation while maintaining high precision.
Solution Approach 2:
The integrated dose map acts as a comprehensive correction template that can be directly copied and applied to various writing tasks. This template approach allows operators to use pre-synthesized correction data without manually combining multiple parameters during operation, simplifying the workflow while ensuring consistent high-precision results across different patterning operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective combination and application of multiple data sets to correct dimensional fluctuations caused by both proximity and loading effects, resulting in improved pattern uniformity and precision during electron beam writing for semiconductor devices.
Implementation Method 1
an electron beam 330 irradiated from a charged particle source 430
Implementation Method 2
The electron beam 330 irradiated from a charged particle source 430 and having passed through the opening 411 of the first aperture plate 410 is deflected by a deflector
Data Source
AI summary
A charged particle beam writing apparatus according to an embodiment, includes a first dose calculating unit configured to calculate a first dose map for each set of a proximity effect correction coefficient map and a base dose map of a beam; a dimension map creation unit configured to create a dimension map of a pattern by using the first dose map calculated for each set; an adder configured to add dimensions of all sets for each position of the dimension map by using the dimension map of each set; a set map creation unit configured to create a set of a proximity effect correction coefficient map and a base dose map by using an added dimension map after addition; and a second dose calculating unit configured to calculate a second dose map by using a created set of the proximity effect correction coefficient map and the base dose map.