Electric Discharge Tubes TRIZ Cases

A segmented shield kit uses a non-conductive upper layer to absorb sputtered dielectric material while preserving the conductive lower shield as an active anode.

Segmented RF generation and DC ion attraction control plasma density while suppressing substrate damage during high-speed film formation.

A laser-processed marker embeds two-dimensional code information directly into substrate processing parts.

A charged particle beam writing apparatus synthesizes proximity effect correction coefficients and base doses into integrated dose maps for pattern deposition.

A pulsed laser beam with predetermined polarization illuminates semiconductor substrates during plasma exposure to enable selective etching of nanoscale trenches.

A vacuum processing apparatus uses a segmented gas introduction system to regulate plasma density and achieve uniform wafer treatment.

A sputtering target disperses carbon particles within an Fe-Pt alloy matrix to form magnetic thin films.

Excited gas passivates remote plasma source walls, preventing anodized coating degradation and stabilizing wafer-to-wafer etch performance.

A partition wall with a controlled aperture separates the wafer processing chamber from the transport mechanism housing chamber.

Plasma treating resist films at minus 20 degrees Celsius improves surface roughness while maintaining thickness for accurate pattern transfer.

A material deposition system uses dopant precursors in a plasma environment to form doped semiconductive materials.

A data processing method corrects irradiation amounts for multiple layers in a writing apparatus.

Embedded Faraday cage in electrostatic chucks eliminates azimuthal non-uniformity and parasitic plasma damage during semiconductor fabrication.

An intermediary gauge head measures isolated space pressure to resolve clearance variations that compromise plasma containment and film uniformity.

A substrate processing method deposits a film with varying thickness on the side wall of an opening to correct shape abnormalities.

Low energy ion beams enhance surface diffusion during deposition to produce high density optical coatings, reducing absorption and defects in VUV applications.

A fine alignment system detects time-resolved backscattered electron waveforms to determine precise X-position edges for e-beam column adjustment.

Inlet mixer homogenizes gas flow to eliminate by-product accumulation and ensure uniform atomic layer deposition.

Stationary cooling panels eliminate coolant leakage risks in rotating vacuum stages, enabling reliable cryogenic processing at -200 °C.

Scanning a mark with representative beams creates an image that acquires the rotation angle, reducing measurement errors and adjustment time.

Broadband plasma processing system adjusts impedance matching via frequency sweep tuning to enable precise dual-frequency pulsed plasma control.

Atomic layer etching employs vapor-phase ligand exchange to remove modified substrate layers, resolving anisotropic etching and non-uniform material removal.

A stepped holding stage exposes wafer rear surfaces to processing gas, enabling uniform thin film deposition on previously inaccessible areas.

A dry etching control method applies alternating polarity voltage to a cathode unit to generate plasma for material removal.

Embedded detectors measure RF power parameters in insulators to enable closed-loop phase shift control between upper and lower electrodes.

Segmented wavelengths with inverse characteristics remove photoresist noise, enabling precise endpoint detection during photomask etching.

An electron beam generator uses overlapping laser beams to create a sub-wavelength interference spot for high-resolution imaging.

A plasma generation system excites nitrogen and hydrogen gases to treat titanium nitride films on semiconductor substrates.

Time-modulated antenna power synchronizes CO gas feeding with low-power phases to suppress carbon deposition on magnetic films.

Rotating concentric exhaust rings with adjustable holes aligns discharge paths to resolve gas flow uniformity contradictions without hardware changes.

Segmented upper and lower cavities with radiation slots maintain plasma uniformity across wide pressure ranges without manual tuning.

An integrated quality monitoring system uses gradient ion chambers to verify radiation dose and location, resolving fragmented quality assurance bottlenecks.

An upper electrode with an offset RF feeding line balances the electric field across a substrate.

Dual magnetic deflection filters separate target ions from impurities to eliminate energy pollution and enhance semiconductor device quality.

Segmenting the central region of auto-correlation functions isolates optical distortions from specimen structures, enabling accurate aberration correction.

A micro-plasma deposition system directs sputtered particles through a gas flow to form thin films on substrates.

A bay connector integrates secondary pins within a standard SATA footprint to support USB and SMBus protocols alongside storage interfaces.

A cooling gas lifts the substrate from the support during physical vapor deposition to enable convection heat transfer.

A composite cover uses a metal base for heat dissipation and a quartz coating to resist plasma, preventing thermal damage to the carrier.

Segmented upper electrodes with independent DC voltage channels adjust edge etching rates while maintaining central consistency.

A dynamic threshold arc detection circuit adapts to varying process recipes and beam positions, enabling rapid arc quenching and minimizing ion beam disruption.

A pulse modulated RF power control method adjusts duty ratio to maintain constant amplitude.

Varying hole densities in concentric gas distribution plate regions redistribute flow to resolve non-uniform deposition profiles.

Alternating hollow cathodes generate and accelerate ions without extra electrodes or magnetic fields.

Symmetric connecting sections on the disc-like electrode structure prevent abnormal discharge by ensuring uniform plasma density across the wafer.

An induction electrode guides electrons from nanostructure tips into a source lens aperture to increase beam density.

A gap between the dielectric window and surrounding body absorbs microwaves, preventing excessive discharge that deteriorates plasma stability.

Continuous small-gas supply prevents flow rate hunting during etching gas switching, eliminating the need for additional valves or stability waiting periods.