Dry Etching Control Using Bidirectional Voltage
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Solution Overview
Problem
Conventional dry etching methods are limited by their reliance on chemical processes and are not applicable to various materials, leading to increased process complexity and redeposition issues.
Innovation Solution
A control method for a dry etching apparatus involving a work piece positioning step, bidirectional voltage source application with alternating polarity, distance adjustment between cathode and anode units, DC voltage application, and temperature control to facilitate plasma etching without chemical processes, allowing etching of various materials with reduced process time and prevention of redeposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional dry etching method using chemical process is used, then etching can be performed on limited materials, but the number of processes increases and various materials cannot be applied
Solution Approach 1:
The patent replaces chemical processes with a physical plasma etching process using bidirectional voltage application. By applying voltage in both positive and negative directions, the system generates plasma that physically etches materials without requiring chemical reactions, thereby eliminating the need for multiple chemical processes and expanding material compatibility.
Solution Approach 2:
The patent changes the voltage application parameters from unidirectional to bidirectional, with frequency controlled between 1 Hz to 1 MHz. This parameter change enables the plasma etching process to effectively etch various materials including metals, semiconductors, and ceramics without requiring material-specific chemical processes.
2Manufacturing precision
If conventional dry etching method is used, then etching process can be performed, but redeposition occurs and etched portion cannot be cleanly formed
Solution Approach 1:
The patent applies periodic bidirectional voltage to the etching apparatus at frequencies between 1 Hz to 1 MHz. The alternating positive and negative voltage cycles create periodic plasma generation and ion bombardment, which continuously removes etched material and prevents redeposition by maintaining a clean etching surface throughout the process.
3Productivity
If bidirectional voltage source with high frequency is used, then plasma generation is efficient, but etching precision decreases due to heat generation
Solution Approach 1:
The patent dynamically adjusts the voltage frequency between 1 Hz to 1 MHz based on the specific material being etched and the desired etching depth. This dynamic frequency control allows the system to optimize between etching speed and precision for different materials, preventing excessive heat generation while maintaining high productivity where applicable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces etching time, improves productivity, and enables clean etching on diverse materials by using a high-energy ion source and precise temperature control to prevent redeposition and contamination.
Implementation Method 1
etching the surface of the work piece using plasma generated by the bidirectional voltage source applied to the cathode unit
Data Source
AI summary
The present invention relates to a control method of a dry etching apparatus which can be applied regardless of materials. The control method of a dry etching apparatus may include: a work piece positioning step of positioning a work piece close to a surface of a cathode unit, facing an anode unit; a bidirectional voltage source applying step of applying a voltage to the cathode unit, the voltage having a polarity alternating between a positive voltage and a negative voltage with time; and an etching step of etching the surface of the work piece using plasma generated by the bidirectional voltage source applied to the cathode unit.