Offset RF Feeding Line for Uniform Plasma in Substrate Treatment
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Solution Overview
Problem
Existing substrate treatment apparatuses face challenges in generating uniform plasma, leading to non-uniform thin film thickness due to asymmetry in the electric field, which affects the deposition and etching processes in semiconductor and display device manufacturing.
Innovation Solution
The apparatus employs a feeding line for applying RF power to an upper electrode positioned at a point distant from the center of the substrate, with additional feeding lines connected to points on the substrate to balance the electric field, ensuring uniform plasma generation and thin film thickness across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If RF power is applied to the upper electrode at the center of the substrate, then the plasma generation is maximized, but the electric field becomes asymmetric leading to non-uniform thin film thickness
Solution Approach 1:
The patent applies asymmetry by positioning the RF power feeding line at a point distant from the center of the substrate (specifically at a point where the distance to the substrate center is 1/4 to 1/2 of the substrate width). This asymmetric positioning compensates for the inherent asymmetry in the chamber structure (such as the presence of a transfer chamber on one side), thereby balancing the electric field distribution and achieving uniform thin film thickness while maintaining adequate plasma generation
2Shape
If the feeding line is positioned at the center of the substrate, then the structure is symmetric, but the electric field asymmetry causes thickness deviation greater than 10%
Solution Approach 1:
The patent deliberately introduces asymmetry by offsetting the feeding line position from the substrate center. This asymmetric configuration is designed to counterbalance the structural asymmetry in the chamber (such as the transfer chamber location), thereby achieving symmetric electric field distribution and uniform thin film deposition with thickness deviation reduced to less than 10%
3Manufacturing precision
If the feeding line is moved away from the center to balance the electric field, then thin film uniformity improves, but plasma generation efficiency decreases
Solution Approach 1:
The patent optimizes the feeding line position by changing the positional parameter to a specific range (distance from substrate center equal to 1/4 to 1/2 of the substrate width). This parameter optimization achieves a balance where the electric field is sufficiently balanced for uniform thin film deposition while maintaining adequate plasma generation efficiency for productive film formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the uniformity of the thin film thickness, reducing thickness deviation to less than 10% and achieving high accuracy in film formation, suitable for semiconductor and display device manufacturing.
Implementation Method 1
an RF power from the RF power source 30 is applied to the backing plate 14 and the gas distribution plate 18
Implementation Method 2
Plasma is generated due to an electric field between the gas distribution plate 18 and the substrate holder 22
Data Source
AI summary
A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.