Concentric Gas Distribution Plate for Uniform Semiconductor Film Deposition
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Solution Overview
Problem
Non-uniform gas flow profiles in semiconductor manufacturing processes, such as plasma ashing, chemical vapor deposition, and etching, result in inconsistent film deposition and removal rates across the substrate, leading to poor uniformity of the film profile.
Innovation Solution
A gas distribution plate (GDP) with concentric regions and varying hole densities and sizes is used to redistribute the gas flow, with a higher open ratio in outer regions and lower in inner regions, ensuring uniform gas distribution across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas flow is supplied directly from the gas source to the substrate, then the gas flow rate is high and the process is simple, but the gas flow profile is non-uniform resulting in poor film uniformity
Solution Approach 1:
The gas distribution plate is divided into multiple concentric regions with different hole density configurations. Each region has specifically designed hole sizes and densities to control local gas flow characteristics, segmenting the uniform gas flow into region-specific patterns that collectively achieve overall uniformity across the substrate surface.
Solution Approach 2:
Different regions of the gas distribution plate are assigned different hole densities and sizes tailored to local requirements. The inner region has lower hole density while outer regions have higher hole density, creating locally optimized gas flow patterns that compensate for radial flow non-uniformity and achieve uniform film deposition across the entire substrate.
2Manufacturing precision
If the gas distribution plate has uniform hole density across all regions, then the structure is simple to manufacture, but the gas flow remains non-uniform across the substrate
Solution Approach 1:
The gas distribution plate is divided into multiple concentric regions with different hole density configurations. Each region has specifically designed hole sizes and densities to control local gas flow characteristics, segmenting the uniform gas flow into region-specific patterns that collectively achieve overall uniformity across the substrate surface.
Solution Approach 2:
Different regions of the gas distribution plate are assigned different hole densities and sizes tailored to local requirements. The inner region has lower hole density while outer regions have higher hole density, creating locally optimized gas flow patterns that compensate for radial flow non-uniformity and achieve uniform film deposition across the entire substrate.
3Manufacturing precision
If the open ratio is uniform across the gas distribution plate, then the structure is symmetric and simple, but the reaction rate varies across the substrate due to non-uniform gas distribution
Solution Approach 1:
Different regions of the gas distribution plate are assigned different hole densities and sizes tailored to local requirements. The inner region has lower hole density while outer regions have higher hole density, creating locally optimized gas flow patterns that compensate for radial flow non-uniformity and achieve uniform film deposition across the entire substrate.
Solution Approach 2:
The open ratio parameter is varied across different radial regions of the gas distribution plate. By changing the hole density and size parameters from inner to outer regions, the system optimizes gas flow distribution to achieve uniform reaction rates across the substrate surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the uniformity of gas flow, leading to consistent reaction rates and film profiles, improving the overall precision and quality of semiconductor fabrication processes.
Implementation Method 1
A gas distribution plate (GDP) with concentric regions and varying hole densities and sizes is used to redistribute the gas flow
Data Source
AI summary
The present disclosure provides an apparatus for fabricating a semiconductor device, including a reaction chamber having a gas inlet for receiving a gas flow, a pedestal in the reaction chamber configured to support a substrate, and a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal, wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and a plurality of first holes arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow.