Plasma Etching Apparatus Embedded Detectors RF Phase Control
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Solution Overview
Problem
Plasma etching processes using high-frequency capacitively coupled plasma often result in non-uniform surface plasma due to the skin effect, leading to inconsistencies in semiconductor processing.
Innovation Solution
A plasma etching apparatus with embedded detection members in insulators to measure RF power parameters, enabling closed-loop phase shift control between upper and lower RF power sources, ensuring uniform plasma distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high frequency RF power is applied to large-area chamber for plasma etching, then etching process efficiency is improved, but skin effect causes non-uniform plasma distribution
Solution Approach 1:
The patent divides the large-area chamber into multiple zones with separate RF power sources, allowing independent control of plasma parameters in each zone to compensate for skin effect and achieve uniform plasma distribution across the entire chamber
Solution Approach 2:
The patent applies different RF power phases and amplitudes to different regions of the chamber based on local plasma conditions, enabling localized adjustment to maintain plasma uniformity while using high frequency for efficient etching
2Manufacturing precision
If embedded detectors are added to insulators for direct RF power measurement, then plasma uniformity control is improved, but device complexity increases
Solution Approach 1:
The patent integrates detectors directly into the insulator structures that already exist in the chamber, combining the measurement function with existing structural components to minimize additional complexity while enabling direct RF power measurement for improved plasma uniformity control
3Manufacturing precision
If closed loop phase shift control is implemented using detector measurements, then plasma distribution uniformity is improved, but control system complexity increases
Solution Approach 1:
The patent implements closed-loop feedback control where detectors measure actual RF power and plasma parameters, and the control system automatically adjusts RF power phase and amplitude to maintain target plasma uniformity, enabling precise control despite increased system complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of plasma uniformity, enhancing the accuracy and consistency of semiconductor processing by synchronizing and adjusting RF power phases to match target phase differences.
Implementation Method 1
at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator
Implementation Method 2
a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power
Implementation Method 3
plasma etching may be performed by applying high energy to gaseous molecules in a vacuum state to ionize or decompose molecules for activation thereof
Implementation Method 4
Recently, plasma is used in a substrate etching process among semiconductor processes
Implementation Method 5
Application of a high frequency to a large-area chamber brings about a skin effect in which current flows to the outside of a conductor as the frequency increases
Data Source
AI summary
A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.