Material Deposition System for Precise Dopant Distribution
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Solution Overview
Problem
Current microelectronic device fabrication processes, particularly physical vapor deposition (PVD), face challenges in achieving desirable dopant concentrations and distributions in transistor regions, leading to high costs and complex processes due to the need for costly conductively-doped semiconductive target structures and inefficient dopant distribution methods.
Innovation Solution
A material deposition system incorporating a dopant source, inert gas source, and PVD apparatus with controlled plasma generation and substrate processing conditions to form doped semiconductive materials with precise dopant distributions, allowing for the formation of microelectronic devices with enhanced dopant concentrations and distributions in source, drain, and channel regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional PVD processes are used with conductively-doped semiconductive target structures, then dopant concentrations in source and drain regions can be achieved, but the cost of producing and using these target structures becomes very high
Solution Approach 1:
The invention introduces dopant precursors into the PVD process before deposition occurs. The dopant precursors are delivered via feed fluid streams and introduced into the plasma environment prior to material deposition, allowing dopants to be incorporated during the deposition process rather than requiring pre-doped target structures
Solution Approach 2:
The invention uses dopant precursors as intermediary substances that are delivered through feed fluid streams and introduced into the plasma. These precursors serve as mediators between the deposition process and the desired dopant incorporation, enabling dopant introduction without requiring costly pre-doped target structures
2Manufacturing precision
If multiple conductively-doped semiconductive target structures with different dopant concentrations are used to create heterogeneous dopant distribution, then the desired dopant distribution can be achieved, but the process complexity and cost increase prohibitively
Solution Approach 1:
The invention enables spatially selective dopant incorporation by controlling the delivery of dopant precursors through feed fluid streams to specific regions of the substrate. This allows heterogeneous dopant distribution to be achieved by varying dopant precursor delivery conditions in different spatial zones rather than using multiple target structures
Solution Approach 2:
The dopant precursors are introduced into the plasma environment before deposition occurs, allowing dopant distribution to be controlled during the deposition process itself rather than requiring multiple separate deposition steps with different pre-doped targets
3Productivity
If conventional PVD processes are used, then relatively high deposition rates can be achieved, but the dopant concentrations in the deposited material are insufficient for desirable heavy doping
Solution Approach 1:
Dopant precursors delivered through feed fluid streams serve as intermediaries that enable simultaneous achievement of high deposition rates and high dopant concentrations. The precursors are introduced into the plasma environment where they facilitate dopant incorporation during rapid deposition without compromising either rate or concentration
Solution Approach 2:
The invention changes the parameters of the PVD process by introducing dopant precursors via feed fluid streams and controlling plasma conditions. This allows the deposition process to operate at high rates while simultaneously achieving high dopant concentrations through controlled precursor delivery and plasma parameter optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system enables the formation of microelectronic devices with improved dopant concentrations and distributions, reducing manufacturing costs and complexity while achieving higher performance and miniaturization, thus addressing the limitations of conventional PVD processes.
Implementation Method 1
A plasma is formed within the physical vapor deposition apparatus using the at least one feed fluid stream
Implementation Method 2
a glow discharge plasma is generated in an inert gas atmosphere by applying a radiofrequency (RF) or direct current (DC) potential
Implementation Method 3
Ions of the plasma travel to and collide with a conductively-doped semiconductive target structure to sputter (e.g., eject) neutral atoms
Implementation Method 4
The sputtered atoms travel across the plasma and deposit on a substrate (e.g., a semiconductive wafer) to be coated
Data Source
AI summary
A material deposition system comprises a dopant source containing at least one dopant precursor material, an inert gas source containing at least one noble gas, and a physical vapor deposition apparatus in selective fluid communication with the dopant source and the inert gas source. The physical vapor deposition apparatus comprises a housing structure, a target electrode, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one dopant precursor material and the at least one noble gas. The target electrode is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure and is spaced apart from the target electrode. A method of forming a microelectronic device, a microelectronic device, a memory device, and an electronic system are also described.